74HCT1G32GW 查看數據表（PDF） - Philips Electronics
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74HCT1G32GW Datasheet PDF : 16 Pages
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Philips Semiconductors
2-input OR gate
Product specification
74HC1G32; 74HCT1G32
DC CHARACTERISTICS
Family 74HC1G
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
OTHER
VCC
(V)
VIH
HIGH-level input voltage
2.0
4.5
6.0
VIL
LOW-level input voltage
2.0
4.5
6.0
VOH
HIGH-level output
voltage
VI = VIH or VIL;
2.0
IO = −20 µA
VI = VIH or VIL;
4.5
IO = −20 µA
VI = VIH or VIL;
6.0
IO = −20 µA
VI = VIH or VIL;
4.5
IO = −2.0 mA
VI = VIH or VIL;
6.0
IO = −2.6 mA
VOL
LOW-level output voltage VI = VIH or VIL;
2.0
IO = 20 µA
VI = VIH or VIL;
4.5
IO = 20 µA
VI = VIH or VIL;
6.0
IO = 20 µA
VI = VIH or VIL;
4.5
IO = 2.0 mA
VI = VIH or VIL;
6.0
IO = 2.6 mA
ILl
input leakage current
VI = VCC or GND 6.0
ICC
quiescent supply current VI = VCC or GND; 6.0
IO = 0
Tamb (°C)
−40 to +85
−40 to +125 UNIT
MIN. TYP.(1) MAX. MIN. MAX.
1.5 1.2
3.15 2.4
4.2 3.2
−
0.8
−
2.1
−
2.8
1.9 2.0
−
1.5 −
V
−
3.15 −
V
−
4.2 −
V
0.5 −
0.5 V
1.35 −
1.35 V
1.8 −
1.8 V
−
1.9 −
V
4.4 4.5 −
4.4 −
V
5.9 6.0 −
5.9 −
V
4.13 4.32 −
3.7 −
V
5.63 5.81 −
5.2 −
V
−
0
0.1 −
0.1 V
−
0
0.1 −
0.1 V
−
0
0.1 −
0.1 V
−
0.15 0.33 −
0.4 V
−
0.16 0.33 −
0.4 V
−
−
1.0 −
1.0 µA
−
−
10
−
20
µA
Note
1. All typical values are measured at Tamb = 25 °C.
2002 May 15
5
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