74HC1G125(2005) 查看數據表（PDF） - Philips Electronics
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74HC1G125 Datasheet PDF : 16 Pages
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Philips Semiconductors
74HC1G125; 74HCT1G125
Bus buffer/line driver; 3-state
12. Dynamic characteristics
74HC_HCT1G125_5
Product data sheet
Table 10: Dynamic characteristics 74HC1G125
Voltages are referenced to GND (ground = 0 V); CL = 50 pF unless otherwise specified; for test
circuit see Figure 8
Symbol Parameter
Conditions
Min Typ Max Unit
Tamb = −40 °C to +85 °C [1]
tPHL,
tPLH
propagation delay A to Y
tPZH,
tPZL
3-state output enable time
OE to Y
tPHZ,
tPLZ
3-state output disable time
OE to Y
CPD
power dissipation
capacitance
see Figure 6
VCC = 2.0 V
VCC = 4.5 V
VCC = 5 V;
CL = 15 pF
VCC = 6.0 V
see Figure 7
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
see Figure 7
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
VI = GND to VCC
-
24 125 ns
-
10 25 ns
-
9 - ns
-
8 21 ns
-
19 155 ns
-
9 31 ns
-
7 26 ns
-
18 155 ns
-
12 31 ns
-
11 26 ns
[2] -
30 - pF
Tamb = −40 °C to +125 °C
tPHL,
tPLH
propagation delay A to Y
tPZH,
tPZL
3-state output enable time
OE to Y
tPHZ,
tPLZ
3-state output disable time
OE to Y
see Figure 6
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
see Figure 7
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
see Figure 7
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
-
- 150 ns
-
- 30 ns
-
- 26 ns
-
- 190 ns
-
- 38 ns
-
- 32 ns
-
- 190 ns
-
- 38 ns
-
- 32 ns
[1] All typical values are measured at Tamb = 25 °C.
[2] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of the outputs.
Rev. 05 — 23 December 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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