74HCT1G125GV(2005) 查看數據表（PDF） - Philips Electronics

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74HCT1G125GV
(Rev.:2005)

Bus buffer/line driver; 3-state

Philips Electronics 

Philips Semiconductors

74HC1G125; 74HCT1G125

Bus buffer/line driver; 3-state

Table 11: Dynamic characteristics 74HCT1G125

Voltages are referenced to GND (ground = 0 V); CL = 50 pF unless otherwise specified; for test

circuit see Figure 8

Symbol Parameter

Conditions

Min Typ Max Unit

Tamb = −40 °C to +85 °C [1]

tPHL, propagation delay A to Y see Figure 6

tPLH

VCC = 4.5 V

-

VCC = 5 V; CL = 15 pF

-

tPZH, 3-state output enable time VCC = 4.5 V; see Figure 7

-

tPZL

OE to Y

tPHZ, 3-state output disable time VCC = 4.5 V; see Figure 7

-

tPLZ

OE to Y

CPD

power dissipation

capacitance

VI = GND to VCC − 1.5 V

[2] -

11 30 ns

10 - ns

10 35 ns

11 31 ns

27 - pF

Tamb = −40 °C to +125 °C

tPHL,

propagation delay A to Y VCC = 4.5 V; see Figure 6

-

-

36 ns

tPLH

tPZH, 3-state output enable time VCC = 4.5 V; see Figure 7

-

-

42 ns

tPZL

OE to Y

tPHZ, 3-state output disable time VCC = 4.5 V; see Figure 7

-

-

38 ns

tPLZ

OE to Y

[1] All typical values are measured at Tamb = 25 °C.

[2] CPD is used to determine the dynamic power dissipation (PD in µW).

PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

Σ(CL × VCC2 × fo) = sum of the outputs.

74HC_HCT1G125_5

Product data sheet

Rev. 05 — 23 December 2005

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

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