74HCT2G00 查看數據表（PDF） - Philips Electronics

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74HCT2G00

Dual 2-input NAND gate

Philips Electronics 

Philips Semiconductors

Dual 2-input NAND gate

Product specification

74HC2G00; 74HCT2G00

FEATURES

• Wide supply voltage range from 2.0 to 6.0 V

• Symmetrical output impedance

• High noise immunity

• Low power dissipation

• Balanced propagation delays

• Very small 8 pins package

• Output capability is standard

• ESD protection:

HBM EIA/JESD22-A114-A exceeds 2000 V

MM EIA/JESD22-A115-A exceeds 200 V.

DESCRIPTION

The 74HC2G/HCT2G00 is a high-speed Si-gate CMOS

device.

The 74HC2G/HCT2G00 provides the 2-input NAND

function.

QUICK REFERENCE DATA

GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.

SYMBOL

PARAMETER

CONDITIONS

TYPICAL

HC2G00 HCT2G00

UNIT

tPHL/tPLH propagation delay nA, nB to nY

CL = 50 pF; VCC = 4.5 V 9

12

ns

CI

input capacitance

1.5

1.5

pF

CPD

power dissipation capacitance per gate notes 1 and 2

10

10

pF

Notes

1. CPD is used to determine the dynamic power dissipation (PD in µW).

PD = CPD × VCC2 × fi × N + ∑ (CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

N = total load switching outputs;

VCC = supply voltage in Volts;

∑ (CL × VCC2 × fo) = sum of outputs.

2. For 74HC2G00 the condition is VI = GND to VCC.

For 74HCT2G00 the condition is VI = GND to VCC − 1.5 V.

2003 Feb 12

2

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