74HCT2G00 查看數據表（PDF） - Philips Electronics
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74HCT2G00 Datasheet PDF : 16 Pages
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Philips Semiconductors
Dual 2-input NAND gate
Product specification
74HC2G00; 74HCT2G00
DC CHARACTERISTICS
Type 74HC2G00
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); note 1.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
OTHER
VCC (V)
Tamb = −40 to +85 °C
VIH
HIGH-level input
voltage
2.0
1.5
4.5
3.15
6.0
4.2
VIL
LOW-level input voltage
2.0
−
4.5
−
6.0
−
VOH
HIGH-level output
VI = VIH or VIL
voltage
IO = −20 µA
2.0
1.9
IO = −20 µA
4.5
4.4
IO = −20 µA
6.0
5.9
IO = −4.0 mA
4.5
4.13
IO = −5.2 mA
6.0
5.63
VOL
LOW-level output
VI = VIH or VIL
voltage
IO = 20 µA
2.0
−
IO = 20 µA
4.5
−
IO = 20 µA
6.0
−
IO = 4.0 mA
4.5
−
IO = 5.2 mA
6.0
−
ILI
input leakage current VI = VCC or GND
6.0
−
ICC
quiescent supply
VI = VCC or GND; IO = 0 6.0
−
current
TYP.
1.2
2.4
3.2
0.8
2.1
2.8
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
−
−
MAX. UNIT
−
V
−
V
−
V
0.5
V
1.35 V
1.8
V
−
V
−
V
−
V
−
V
−
V
0.1
V
0.1
V
0.1
V
0.33 V
0.33 V
±1.0 µA
10
µA
2003 Feb 12
6
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