74HCT2G00 查看數據表（PDF） - Philips Electronics
零件编号
产品描述 (功能)
生产厂家
74HCT2G00 Datasheet PDF : 16 Pages
| |||
Philips Semiconductors
Dual 2-input NAND gate
Product specification
74HC2G00; 74HCT2G00
Type 74HCT2G00
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); note 1.
SYMBOL
PARAMETER
Tamb = −40 to +85 °C
VIH
HIGH-level input
voltage
VIL
LOW-level input
voltage
VOH
HIGH-level output
voltage
VOL
LOW-level output
voltage
ILI
input leakage current
ICC
quiescent supply
current
∆ICC
additional supply
current per input
Tamb = −40 to +125 °C
VIH
HIGH-level input
voltage
VIL
LOW-level input
voltage
VOH
HIGH-level output
voltage
VOL
LOW-level output
voltage
ILI
ICC
∆ICC
input leakage current
quiescent supply
current
additional supply
current per input
TEST CONDITIONS
OTHER
VCC (V)
4.5 to 5.5
4.5 to 5.5
VI = VIH or VIL
IO = −20 µA
IO = −4.0 mA
VI = VIH or VIL
IO = 20 µA
IO = 4.0 mA
VI = VCC or GND
VI = VCC or GND;
IO = 0
VI = VCC − 2.1 V; IO = 0
4.5
4.5
4.5
4.5
5.5
5.5
4.5 to 5.5
4.5 to 5.5
4.5 to 5.5
VI = VIH or VIL
IO = −20 µA
IO = −4.0 mA
VI = VIH or VIL
IO = 20 µA
IO = 4.0 mA
VI = VCC or GND
VI = VCC or GND;
IO = 0
VI = VCC − 2.1 V; IO = 0
4.5
4.5
4.5
4.5
5.5
5.5
4.5 to 5.5
MIN. TYP. MAX. UNIT
2.0
1.6
−
V
−
1.2
0.8
V
4.4
4.5
−
V
4.13 4.32 −
V
−
0
0.1
V
−
0.15 0.33 V
−
−
±1.0 µA
−
−
10
µA
−
−
375
µA
2.0
−
−
−
4.4
−
3.7
−
−
−
−
−
−
−
−
−
−
−
V
0.8
V
−
V
−
V
0.1
V
0.4
V
±1.0 µA
20
µA
410
µA
Note
1. All typical values are measured at Tamb = 25 °C.
2003 Feb 12
8
Share Link: 