74V1G125S 查看數據表（PDF） - STMicroelectronics

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74V1G125S

SINGLE BUS BUFFER (3-STATE)

STMicroelectronics 

74V1G125

CAPACITIVE CHARACTERISTICS

Symb ol

Parameter

Test Conditions

Valu e

Unit

TA = 25 oC

-40 to 85 oC

Min. T yp. Max. Min. Max.

CIN Input Capacitance

4

pF

COUT Output Capacitance

6

10

10 pF

CPD Power Dissipation

Capacitance (note 1)

14

pF

1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto

Test Circuit).Average operting current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC

TEST CIRCUIT

TEST

tPLH, tPHL

tPZL, tPLZ

tPZH, tPHZ

CL = 15/50 pF or equivalent (includes jig and probe capacitance)

RL = R1 = 1KΩ orequivalent

RT = ZOUT of pulse generator (typically 50Ω)

SW IT CH

Open

VCC

GND

4/8

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