74V1T08S 查看數據表（PDF） - STMicroelectronics
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74V1T08S Datasheet PDF : 7 Pages
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74V1T08
DC SPECIFICATIONS
Symb ol
Parameter
VIH High Level Input
Voltage
VIL Low Level Input
Voltage
VOH High Level Output
Voltage
VOL Low Level Output
Voltage
II Input Leakage Current
ICC Quiescent Supply
Current
∆ICC Additional Worst Case
Supply Current
IOPD Output Leakage
Current
Test Conditions
V CC
( V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
0 to 5.5
5.5
IO=-50 µA
IO=-8 mA
IO=50 µA
IO=8 mA
VI = 5.5V or GND
VI = VCC or GND
5.5
One Input at 3.4V,
other input at VCC or
GND
0
VOUT = 5.5V
Value
TA = 25 oC
Min. Typ. Max.
2
-40 to 85 oC
Min . Max.
2
0.8
0.8
4.4 4.5
4.4
3.94
3.8
0.0 0.1
0.1
0.36
0.44
±0.1
±1.0
1
10
1.35
1.5
0
0.5
5.0
Un it
V
V
V
V
µA
µA
mA
µA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf =3 ns)
Symb ol
Parameter
tPLH Propagation Delay
tPHL Time
(*) Voltage range is 5V ± 0.5V
Test Condition
VCC (*) CL
( V)
(pF)
5.0
15
5.0
50
Value
TA = 25 oC
Min. Typ. Max.
4.7 6.7
5.5 7.7
-40 to 85 oC
Min . Max.
1.0 7.5
1.0 8.5
Unit
ns
CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
Test Conditions
Value
Un it
TA = 25 oC
-40 to 85 oC
Min. Typ . Max. Min . Max.
CIN Input Capacitance
4
10
10
pF
CPD Power Dissipation
Capacitance (note 1)
14
pF
1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC •fIN + ICC
3/7
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