GM72V66841CT-7J 查看數據表（PDF） - LG

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GM72V66841CT-7J

2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM

LG 

LG Semicon

GM72V66841CT/CLT

DQM Truth Table

Function

Write enable/output enable

Write inhibit/output disable

* Notes : H: VIH, L: VIL, X: VIH or VIL.

Write : lDID is needed.

Read : lDOD is needed.

Symbol

ENB

MASK

CKE

n-1

H

H

n

DQM

X

L

X

H

The GM72V66841CT/CLT can mask input/output

data by means of DQM.

During reading, the output buffer is set to Low-Z

by setting DQM to Low, enabling data output. On

the other hand, when DQM is set to High, the

output buffer becomes High-Z, disabling data

output.

During writing, data is written by setting DQM to

Low. When DQM is set to High, the previous

data is held (the new data is not written). Desired

data can be masked during burst read or burst

write by setting DQM. For details, refer to the

DQM

control

section

of

the

GM72V66841CT/CLT operating instructions.

6

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