HGTG20N100D2 查看數據表（PDF） - Intersil
零件编号
产品描述 (功能)
生产厂家
HGTG20N100D2 Datasheet PDF : 5 Pages
| |||
Specifications HGTG20N100D2
Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Voltage
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
BVCES
IC = 250mA, VGE = 0V
1000
-
-
V
ICES
VCE = BVCES
TC = +25oC
-
-
250
µA
VCE = 0.8 BVCES TC = +125oC
-
-
1.0
mA
VCE(SAT)
IC = IC90,
VGE = 15V
TC = +25oC
-
3.1
3.8
V
TC = +125oC
-
2.9
3.6
V
IC = IC90,
VGE = 10V
TC = +25oC
-
3.3
4.1
V
TC = +125oC
-
3.2
4.0
V
VGE(TH)
IC = 500µA,
VCE = VGE
TC = +25oC
3.0
4.5
6.0
V
Gate-Emitter Leakage Current
IGES
VGE = ±20V
-
-
±250
nA
Gate-Emitter Plateau Voltage
VGEP
IC = IC90, VCE = 0.5 BVCES
-
7.1
-
V
On-State Gate Charge
QG(ON)
IC = IC90,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
-
120
160
nC
-
163
212
nC
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
tD(ON)I
tRI
tD(OFF)I
L = 50µH, IC = IC90, RG = 25Ω,
VGE = 15V, TJ = +125oC,
VCE = 0.8 BVCES
-
100
-
ns
-
150
-
ns
-
500
650
ns
Current Fall Time
tFI
-
520
680
ns
Turn-Off Energy (Note 1)
WOFF
-
3.7
-
mJ
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off
tD(ON)I
tRI
tD(OFF)I
L = 50µH, IC = IC90, RG = 25Ω,
VGE = 10V, TJ = +125oC,
VCE = 0.8 BVCES
-
100
-
ns
-
150
-
ns
-
410
530
ns
Current Fall Time
tFI
-
520
680
ns
Turn-Off Energy (Note 1)
Thermal Resistance
WOFF
RθJC
-
3.7
-
mJ
-
0.7
0.83 oC/W
NOTE: 1. Turn-Off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A) The HGTG20N100D2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
40
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VCE = 10V
30
PULSE DURATION = 250µs
80
DUTY CYCLE < 0.5%, TC = +25oC
VGE = 15V
VGE = 8.5V
70
60
VGE = 8.0V
20
TC = +150oC
TC = +25oC
10
TC = -40oC
0
0
2
4
6
8
10
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
50
40
VGE = 7.5V
30
20 VGE = 6.0V
VGE = 7.0V
10
VGE = 6.5V
0
0
2
4
6
8
10
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
3-94
Share Link: 