HGTG20N100D2 查看數據表（PDF） - Intersil

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HGTG20N100D2

20A, 1000V N-Channel IGBT

Intersil 

HGTG20N100D2

Typical Performance Curves (Continued)

1.2

VGE = 15V, RG = 50Ω

1.0

VGE = 10V, RG = 50Ω

0.8

VGE = 15V, RG = 25Ω

0.6

VGE = 10V, RG = 25Ω

0.4

TJ = +150oC

VCE = 800V

L = 50µH

0.2

0.0

1

10

40

ICE, COLLECTOR-EMITTER CURRENT (A)

FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER

CURRENT

40

VGE = 10V

100

VCE = 400V

fMAX1 = 0.05/tD(OFF)I

fMAX2 = (PD - PC)/WOFF

PC = DUTY FACTOR = 50%

RθJC = 0.7oC/W

10

VCE = 800V

TJ = +150oC, TC = +75oC, VGE = 15V

RG = 25Ω, L = 50µH

1

1

10

100

NOTE:

ICE, COLLECTOR-EMITTER CURRENT (A)

PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION

FIGURE 10. OPERATING FREQUENCY vs COLLECTOR-

EMITTER CURRENT AND VOLTAGE

TJ = +150oC

10

Test Circuit

TJ = +25oC

1

1

2

3

4

5

VCE(ON), SATURATION VOLTAGE (V)

FIGURE 11. COLLECTOR-EMITTER SATURATION VOLTAGE

L = 50µH

1/RG = 1/RGEN + 1/RGE

RGEN = 50Ω

20V

0V

RGE = 50Ω

VCC

+

800V -

FIGURE 12. INDUCTIVE SWITCHING TEST CIRCUIT

3-96

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