7MBR75SB060 查看數據表（PDF） - Fuji Electric
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7MBR75SB060 Datasheet PDF : 7 Pages
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IGBT Modules
7MBR75SB060
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Condition
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
tr
tr(i)
toff
tf
VF
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
VFM
IRRM
R
B
VCE=600V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=75mA
VGE=15V, Ic=75A chip
terminal
VGE=0V, VCE=10V, f=1MHz
VCC=300V
IC=75A
VGE=±15V
RG=33Ω
IF=75A
chip
terminal
IF=75A
VCES=600V, VGE=0V
VCE=0V, VGE=±20V
IC=50A, VGE=15V chip
terminal
VCC=300V
IC=50A
VGE=±15V
RG=51Ω
VR=600V
IF=75A
chip
terminal
VR=800V
T=25°C
T=100°C
T=25/50°C
Characteristics
Unit
Min.
Typ.
Max.
1.0 mA
0.2 µA
5.5
7.8
8.5 V
1.8
V
2.1
2.55
7500
pF
0.45
1.2 µs
0.25
0.6
0.08
0.40
1.0
0.05
0.35
1.7
V
2.0
2.7
0.3 µs
1.0 mA
0.2 µA
1.8
V
2.05
2.5
0.45
1.2 µs
0.25
0.6
0.40
1.0
0.05
0.35
1.0 mA
1.1
V
1.2
1.5
1.0 mA
5000
Ω
465
495
520
3305
3375
3450 K
Thermal resistance Characteristics
Item
Symbol
Condition
Inverter IGBT
Thermal resistance ( 1 device )
Rth(j-c)
Inverter FWD
Brake IGBT
Converter Diode
Contact thermal resistance *
Rth(c-f)
With thermal compound
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Min.
Characteristics
Typ.
Max.
0.42
0.90
0.63
0.70
0.05
Unit
°C/W
Equivalent Circuit Schematic
[Converter]
21(P)
[B rake]
2 2 (P 1 )
20(G u)
[In v e r te r ]
18(G v)
16(G w)
[Thermistor]
8
9
1(R)
2(S)
3(T)
19(Eu)
17(Ev)
15(Ew)
7(B)
4(U)
5(V)
6(W )
23(N)
14(G b)
2 4 (N 1 )
13(G x)
12(G y)
11(G z)
1 0 (E n )
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