7MBR75SB060 查看數據表（PDF） - Fuji Electric
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7MBR75SB060 Datasheet PDF : 7 Pages
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IGBT Modules
7MBR75SB060
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 25 oC (typ.)
120
VGE= 20V 15V
12V
100
80
60
40
20
10V
0
0
120
100
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
[ Brake ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Tj= 25 oC
Tj= 125 oC
80
60
40
20
0
0
1
2
3
4
Collector - Emitter voltage : VCE [ V ]
20000
10000
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
Cies
1000
Coes
Cres
100
0
5
10
15
20
25
30
35
Collector - Emitter voltage : VCE [ V ]
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 125 oC (typ.)
120
VGE= 20V
15V
12V
100
80
60
40
10V
20
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25 oC (typ.)
10
8
6
4
2
0
5
500
Ic=100A
Ic= 50A
Ic= 25A
10
15
20
Gate - Emitter voltage : VGE [ V ]
[ Brake ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=50A, Tj= 25 oC
25
25
400
20
300
15
200
10
100
5
0
0
0
50
100
150
200
250
300
Gate charge : Qg [ nC ]
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