DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

7MBR100SD060 查看數據表(PDF) - Fuji Electric

零件编号
产品描述 (功能)
生产厂家
7MBR100SD060 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IGBT Module
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=24 , Tj= 25°C
1000
ton
toff
tr
100
tf
7MBR100SD060
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg= 24Ω, Tj= 125°C
1000
ton
toff
tr
100
tf
10
0
50
100
150
200
Collector current : Ic [ A ]
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=300V, Ic=100A, VGE=±15V, Tj= 25°C
5000
ton
toff
tr
1000
100
tf
10
10
100
300
Gate resistance : Rg [ ]
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=300V, Ic=100A, VGE=±15V, Tj= 125°C
20
Eon
15
10
5
0
10
Eoff
Err
100
300
Gate resistance : Rg [ W ]
10
0
50
100
150
200
Collector current : Ic [ A ]
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=24
10
Eon(125°C)
8
Eoff(125°C)
Eon(25°C)
6
Eoff(25°C)
4
2
Err(125°C)
Err(25°C)
0
0
50
100
150
200
Collector current : Ic [ A ]
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=24,Tj<=125°C
1200
1000
800
600
SCSOA
(non-repetitive pulse)
400
200
0
0
RBSOA
(Repetitive pulse)
200
400
600
800
Collector - Emitter voltage : VCE [ V ]

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]