1N5818 查看數據表（PDF） - LiteOn Technology

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1N5818

SCHOTTKY BARRIER RECTIFIERS

LiteOn Technology 

LITE-ON

SEMICONDUCTOR

SCHOTTKY BARRIER RECTIFIERS

FEATURES

Metal-Semiconductor junction with guard ring

Epitaxial construction

Low forward voltage drop

High current capability

The plastic material carries UL recognition 94V-0

For use in low voltage,high frequency inverters,free

wheeling,and polarity protection applications

MECHANICAL DATA

Case : JEDEC DO-41 molded plastic

Polarity : Color band denotes cathode

Weight : 0.012 ounces, 0.34 grams

Mounting position : Any

1N5817 thru 1N5819

REVERSE VOLTAGE - 20 to 40 Volts

FORWARD CURRENT - 1.0 Ampere

DO-41

A

B

A

C

D

DO-41

Dim.

Min.

Max.

A

25.4

-

B

4.10

5.20

C

0.71

0.86

D

2.00

2.70

All Dimensions in millimeter

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

CHARACTERISTICS

SYMBOL

1N5817

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward

Rectified Current

@TA=90 C

Peak Forward Surge Current

8.3ms single half sine-wave

super imposed on rated load (JEDEC Method)

Maximum forward Voltage at 1.0A DC

Maximum forward Voltage at 3.0A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@TJ=25 C

@TJ=100 C

Typical Junction Capacitance (Note 1)

VRRM

VRMS

VDC

I(AV)

IFSM

VF

VF

IR

CJ

20

14

20

0.450

0.750

0.25

10

Typical Thermal Resistance (Note 2)

Operating Temperature Range

Storage Temperature Range

R0JA

TJ

TSTG

NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2.Thermal Resistance Junction to Ambient.

1N5818

30

21

30

1.0

1N5819

40

28

40

UNIT

V

V

V

A

25

A

0.550

0.875

110

80

-55 to +125

-55 to +150

0.600

V

0.900

V

0.1

mA

10

mA

pF

C/W

C

C

REV. 4, Aug-2011, KDHC01

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