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1N5818M(RevD-2) 查看數據表(PDF) - Diodes Incorporated.

零件编号
产品描述 (功能)
生产厂家
1N5818M
(Rev.:RevD-2)
Diodes
Diodes Incorporated. Diodes
1N5818M Datasheet PDF : 2 Pages
1 2
1N5817M / 1N5818M / 1N5819M
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIER
Features
· High Current Capability
· Low Forward Voltage Drop
· Guard Ring for Transient Protection
· Glass Package for High Reliability
· Packaged for Surface Mount Applications
Mechanical Data
· Case: MELF, Glass
· Terminals: Solderable per MIL-STD-202,
Method 208
· Polarity: Cathode band
· Approx Weight: 0.25 gram
· Mounting Position: Any
A
B
C
MELF
Dim
Min
Max
A
4.80
5.20
B
2.40
2.60
C
0.55 Nominal
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Maximum Average Forward Rectified Current
@TT = 90°C (Note 1)
Maximum Forward Surge Current. Half Cycle @60Hz
Superimposed on rated load, JEDEC Method
Maximum Forward Voltage Drop
@ IF = 1.0A
@ IF = 3.0A
Maximum Reverse Leakage Current @ VRRM
@ TA = 25°C
@ TA = 100°C
Typical Thermal Resistance, Junction to Ambient (Note 1)
Typical Junction Capacitance (Note 2)
Storage and Operating Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VF
IR
RqJA
Cj
Tj, TSTG
1N5817M
20
14
0.450
0.750
1N5818M
30
21
1.0
25
0.550
0.875
1.0
10
130
110
-60 to +125
1N5819M
40
28
0.600
0.900
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Measured at VR = 4.0V, f = 1.0MHz.
Units
V
V
A
A
V
mA
K/W
pF
°C
DS13001 Rev. D-2
1 of 2
1N5817M/1N5818M/1N5819M

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