ACS108 查看數據表（PDF） - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
ACS108 Datasheet PDF : 13 Pages
| |||
Characteristics
ACS108
Figure 4. On-state rms current versus ambient
temperature (free air convection)
Figure 5. Relative variation of thermal
impedance junction to ambient versus pulse
duration
IT(RMS) (A)
0.9
0.8
0.7 TO-92
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
Single layer Printed
circuit board FR4
Natural convection
25
SOT-223
a =180°
Ta °C
50
75
100
125
K=[Zth(j-a)/Rth(j-a)]
1.00
Zth(j-a)
0.10
TO -92
SOT-223
0.01
1.0E-03
1.0E-02
tP (s)
SOT-223
Copper surface
area = 5cm²
1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 6. Relative variation of holding and
latching current versus junction temperature
IH, IL [Tj] / IH, IL [Tj=25 °C]
3.0
2.5
IL
2.0
1.5
IH
1.0
0.5
0.0
-50
-25
0
Tj(°C)
25
50
75
100
125
Figure 7. Relative variation of IGT and VGT
versus junction temperature
IGT, VGT [Tj] / IGT, VGT, [Tj=25 °C]
3.5
3.0
IGT Q2
2.5
IGT Q3
2.0
1.5
1.0
VGT Q2-Q3
0.5
0.0
-50
-25
0
Tj(°C)
25
50
75
100
125
Figure 8. Surge peak on-state current versus
number of cycles
ITSM(A)
14
13
12
11
10
9
8
7 SOT-223
6
Repetitive
Ttab = 104 °C
5
4
3
TO-92
2 Repetitive
1 Tlead = 76 °C
0
1
Non repetitive
Tj initial=25 °C
t=20ms
One cycle
Number of cycles
10
100
1000
Figure 9. Non repetitive surge peak on-state
current for a sinusoidal pulse, and
corresponding value of I²t
ITSM(A), I²t (A²s)
1.E+03
1.E+02
Sinusoidal pulse,
tp < 10 ms
ITSM
Tj initial = 25 °C
1.E+01
1.E+00
1.E-01
0.01
tp(ms)
0.10
1.00
I²t
10.00
4/13
DocID6518 Rev 5
Share Link: 