ACS108 查看數據表（PDF） - STMicroelectronics
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ACS108 Datasheet PDF : 13 Pages
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ACS108
Characteristics
Figure 10. On-state characteristics (maximum
values)
Figure 11. Relative variation of critical rate of
decrease of main current versus junction
temperature
ITM(A)
100.00
(dI/dt)c [Tj] / (dI/dt)c [Tj=125 °C]
2.5
2.0
10.00
1.5
1.00
Tj=125 °C
Tj=25 °C
0.10
0.0 0.5 1.0 1.5 2.0
VTM(V)
2.5 3.0
Tj max.:
Vto= 0.85 V
Rd= 300 mΩ
3.5 4.0 4.5
1.0
0.5
Tj (°C)
0.0
25
35
45
55
65
75
85
95 105 115 125
Figure 12. Relative variation of static dV/dt Figure 13. Relative variation of leakage current
immunity versus junction temperature(1)
versus junction temperature
dV/dt [Tj] / dV/dt [T j=125°C]
5
4
3
2
1
0
25
50
VD=VR=536V
IDRM/IRRM [Tj;V DRM/VRRM]/IDRM/IRRM [Tj=125°C;800 V]
1.0E+00
Tj(°C)
75
100
1.0E-01
1.0E-02
1.0E-03
125
25
VDRM=VRRM=800 V
VDRM=VRRM=600 V
Tj(°C)
50
75
100
125
1. VD = VR = 402 V: Typical values above 5 kV/µs. Beyond equipment capability
Figure 14. Relative variation of critical rate of
decrease of main current (di/dt)c versus
(dV/dt)c
Figure 15. Thermal resistance junction to
ambient versus copper surface under tab
(SOT-223)
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1.0
(dV/dt)c (V/µs)
10.0
Tj =125 °C
100.0
Rth(j-a) (°C/W)
140
120
Printed circuit board FR4
copper thickness = 35 µm
SOT-223
100
80
60
40
20
SCU(cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
DocID6518 Rev 5
5/13
13
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