DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ACT4072SH-T 查看數據表(PDF) - Active-Semi, Inc

零件编号
产品描述 (功能)
生产厂家
ACT4072SH-T
ACTIVE-SEMI
Active-Semi, Inc ACTIVE-SEMI
ACT4072SH-T Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Active-Semi
ACT4072
Rev2, 27-May-08
ABSOLUTE MAXIMUM RATINGSc
PARAMETER
VALUE
UNIT
IN to G
-0.3 to +34
V
EN to G
SW to G
BS to SW
-0.3 to VIN + 0.3
V
-1 to VIN + 1
V
-0.3 to +8
V
FB, COMP to G
-0.3 to +6
V
Continuous SW Current
Internally limited
A
Junction to Ambient Thermal Resistance (θJA)
Maximum Power Dissipation
105
°C/W
0.76
W
Operating Junction Temperature
-40 to 150
°C
Storage Temperature
-55 to 150
°C
Lead Temperature (Soldering, 10 sec)
300
°C
Ambient Operating Temperature
-40 to 85
°C
c: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS
(VIN = 12V, TA= 25°C, unless otherwise specified.)
PARAMETER
SYMBOL TEST CONDITIONS
Input Voltage
Feedback Voltage
VIN
VFB
VIN = 12V
High-Side Switch On Resistance
RONH
Low-Side Switch On Resistance
RONL
SW Leakage
VEN = 0
Current Limit
ILIM
COMP to Current Limit Transconductance GCOMP
Error Amplifier Transconductance
GEA
ICOMP = ±10µA
Error Amplifier DC Gain
AVEA
Switching Frequency
fSW
Short Circuit Switching Frequency
VFB = 0
Maximum Duty Cycle
DMAX
VFB = 1.1V, PWM mode
Minimum Duty Cycle
Enable Threshold Voltage
DMIN
VFB = 1.4V, PFM mode
Hysteresis = 0.1V
Enable Pull Up Current
Supply Current in Shutdown
IC Supply Current in Operation
Thermal Shutdown Temperature
VEN = 0
VEN = 3V, not switching
Hysteresis = 10°C
MIN
4.5
1.198
2.4
340
0.7
TYP MAX UNIT
30
V
1.222 1.246 V
0.13
10
0
10 µA
3.3
A
2
A/V
550
µA/V
4000
V/V
420 500 kHz
60
kHz
88
%
0
%
1
1.3
V
2
µA
6
20 µA
0.8
2
mA
160
°C
Innovative PowerTM
-3-
www.active-semi.com
Copyright © 2008 Active-Semi, Inc.

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]