AD5263BRUZ200 查看數據表（PDF） - Analog Devices
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AD5263BRUZ200
Analog Devices
AD5263BRUZ200 Datasheet PDF : 28 Pages
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ELECTRICAL CHARACTERISTICS—20 kΩ, 50 kΩ, 200 kΩ VERSIONS
VDD = +5 V, VSS = –5 V, VL = +5 V, VA = +VDD, VBB = 0 V, –40°C < TA < +125°C, unless otherwise noted.
Table 1.
Parameter
DC CHARACTERISTICS—RHEOSTAT MODE
Resistor Differential NL2
Resistor Nonlinearity2
Nominal Resistor Tolerance3
Resistance Mode Temperature
Coefficient
Wiper Resistance
DC CHARACTERISTICS—POTENTIOMETER
DIVIDER MODE
Resolution
Differential Nonlinearity4
Integral Nonlinearity4
Voltage Divider Temperature Coefficient
Full-Scale Error
Zero-Scale Error
RESISTOR TERMINALS
Voltage Range5
Capacitance6 Ax, Bx
Symbol
R-DNL
R-INL
∆RAB
∆RWB/∆T
∆RWA/∆T
RW
N
DNL
INL
∆VW/∆T
VWFSE
VWZSE
VA,B,W
CA,B
Capacitance6 Wx
CW
Common-Mode Leakage
ICM
Shutdown Current7
ISHDN
DIGITAL INPUTS
Input Logic High
VIH
Input Logic Low
VIL
Input Logic High (SDA and SCL)
VIH
Input Logic Low (SDA and SCL)
VIL
Input Current
IIL
Input Capacitance6
CIL
DIGITAL OUTPUTS
SDA
VOL
VOL
O1, O2
VOH
O1, O2
VOL
SDO
VOH
SDO
VOL
Three-State Leakage Current
IOZ
Output Capacitance6
COZ
Conditions
Specifications apply to all VRs
RWB, VA = NC
RWB, VA = NC
TA = 25°C
IW = 1 V/RAB
Specifications apply to all VRs
Code = 0x80
Code = 0xFF
Code = 0x00
f = 1 MHz, measured to GND,
Code = 0x80
f = 1 MHz, measured to GND,
Code = 0x80
VA = VB = VDD/2
VSS = 0 V
VSS = 0 V
VIN = 0 V or +5 V
ISINK = 3 mA
ISINK = 6 mA
ISOURCE = 40 μA
ISINK = 1.6 mA
RL = 2.2 kΩ to VDD
ISINK = 3 mA
VIN = 0 V or +5 V
Min
Typ 1
−1
±1/4
−1
±1/2
−30
30
30
60
−1
±1/4
−1
±1/2
5
−2
−1
0
+1
VSS
25
55
1
0.02
2.4
0.7 × VL
−0.5
5
4
VDD − 0.1
3
AD5263
Max Unit
+1
LSB
+1
LSB
+30 %
ppm/°C
ppm/°C
150
Ω
8
Bits
+1
LSB
+1
LSB
ppm/°C
+0
LSB
+2
LSB
VDD
V
pF
pF
nA
5
μA
V
0.8
V
VL + 0.5 V
0.3 × VL V
±1
μA
pF
0.4
V
0.6
V
V
0.4
V
V
0.4
V
±1
μA
8
pF
Rev. A | Page 3 of 28
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