CHA5390-99F 查看數據表（PDF） - United Monolithic Semiconductors

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CHA5390-99F

24-30GHz Medium Power Amplifier

United Monolithic Semiconductors 

24-30GHz Medium Power Amplifier

CHA5390

Electrical Characteristics for Broadband Operation

Tamb = +25°C, Vd1,2,3,4 = 5V Id=460mA

Symbol

Parameter

Fop Operating frequency range

G

Small signal gain (1)

∆G Small signal gain flatness (1)

Is

Reverse isolation

P1dB

IP3

Pulsed output power at 1dB compression (1)

3rd order intercept point

PAE Power added efficiency at saturation

VSWRin Input VSWR

VSWRout Output VSWR

Id

Bias current

Min Typ Max

24

30

21 (2) 24 (2)

±2

50

24

25

33

16

3.0:1

3.0:1

460

720

Unit

GHz

dB

dB

dB

dBm

dBm

%

mA

(1) On Wafer measurements

(2) [26-29 GHz]: 24dB min [24-31 GHz]: 21dB min

For Tj<175°C ( 80°C ambient ), Id should be below 475mA under 5V bias.

Current source biasing network is recommended.

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol

Parameter

Values

Unit

Vd

Drain bias voltage

6.0

V

Id

Drain bias current

720

mA

Vg

Gate bias voltage

-2.0 to +0.4

V

Pin

Maximum peak input power overdrive (2)

+15

dBm

Ta

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +155

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) Duration < 1s.

Ref. : CHA53901012 - 12-Jan.-01

2/6

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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