AD8130 查看數據表（PDF） - Analog Devices

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AD8130

Low Cost 270 MHz Differential Receiver Amplifiers

Analog Devices 

ABSOLUTE MAXIMUM RATINGS

Table 4.

Parameter

Supply Voltage

Power Dissipation

Input Voltage (Any Input)

Differential Input Voltage (AD8129)

VS ≥ ±11.5 V

Differential Input Voltage (AD8129)

VS < ±11.5 V

Differential Input Voltage (AD8130)

Storage Temperature Range

Lead Temperature (Soldering, 10 sec)

Junction Temperature

Rating

26.4 V

Refer to Figure 4

−VS − 0.3 V to +VS + 0.3 V

±0.5 V

±6.2 V

±8.4 V

−65°C to +150°C

300°C

150°C

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

THERMAL RESISTANCE

θJA is specified for the worst-case conditions, that is, θJA is

specified for the device soldered in a circuit board in still air.

Table 5. Thermal Resistance

Package Type

θJA

8-Lead SOIC/4-Layer

121

8-Lead MSOP/4-Layer

142

Unit

°C/W

°C/W

Maximum Power Dissipation

The maximum safe power dissipation in the AD8129/AD8130

packages is limited by the associated rise in junction temp-

erature (TJ) on the die. At approximately 150°C, which is the

glass transition temperature, the plastic changes its properties.

Even temporarily exceeding this temperature limit can change

the stresses that the package exerts on the die, permanently

shifting the parametric performance of the AD8129/AD8130.

Exceeding a junction temperature of 150°C for an extended

period can result in changes in the silicon devices, potentially

causing failure.

AD8129/AD8130

The power dissipated in the package (PD) is the sum of the

quiescent power dissipation and the power dissipated in the

package due to the load drive. The quiescent power is the

voltage between the supply pins (VS) times the quiescent

current (IS). The power dissipated due to the load drive

depends upon the particular application. The power due to

load drive is calculated by multiplying the load current by the

associated voltage drop across the device. RMS voltages and

currents must be used in these calculations.

Airflow reduces θJA. In addition, more metal directly in contact

with the package leads from metal traces through holes, ground,

and power planes reduces the θJA.

Figure 4 shows the maximum safe power dissipation in the

package vs. the ambient temperature for the 8-lead SOIC

(121°C/W) and MSOP (θJA = 142°C/W) packages on a JEDEC

standard 4-layer board. θJA values are approximations.

1.75

1.50

1.25

1.00

SOIC

0.75

MSOP

0.50

0.25

0

–40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 100 110 120

AMBIENT TEMPERATURE (°C)

Figure 4. Maximum Power Dissipation vs. Temperature

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on

the human body and test equipment and can discharge without detection. Although this product features

proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy

electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance

degradation or loss of functionality.

Rev. C | Page 9 of 40

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