DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

AD8422BRMZ-R7 查看數據表(PDF) - Analog Devices

零件编号
产品描述 (功能)
生产厂家
AD8422BRMZ-R7 Datasheet PDF : 24 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Data Sheet
SPECIFICATIONS
SOIC PACKAGE
VS = ±15 V, VREF = 0 V, TA = 25°C, G = 1, RL = 2 kΩ, unless otherwise noted.
Table 1.
Parameter
Test Conditions/
Comments
Min
COMMON-MODE REJECTION RATIO
CMRR DC to 60 Hz with 1 kΩ
Source Imbalance
VCM = −10 V to +10 V
G=1
86
G = 10
106
G = 100
126
G = 1000
146
Over Temperature, G=1
T = −40°C to +85°C 83
CMRR at 7 kHz
VCM = −10 V to +10 V
G=1
80
G = 10
90
G = 100
100
G = 1000
100
NOISE1
Voltage Noise, 1 kHz
Input Voltage Noise, eNI
Output Voltage Noise, eNO
Peak to Peak, RTI
G=1
G = 10
G = 100 to 1000
Current Noise
VOLTAGE OFFSET2
Input Offset, VOSI
Over Temperature
Average Temperature
Coefficient
Output Offset, VOSO
Over Temperature
Average Temperature
Coefficient
Offset RTI vs. Supply (PSR)
G=1
G = 10
G = 100
G = 1000
INPUT CURRENT
Input Bias Current
Over Temperature
Average Temperature
Coefficient
Input Offset Current
Over Temperature
Average Temperature
Coefficient
VIN+, VIN−, VREF = 0 V
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 0.1 Hz to 10 Hz
VS = ±1.8 V to ±15 V
T = −40°C to +85°C
VS = ±1.8 V to ±15 V
T = −40°C to +85°C
VS = ±1.8 V to ±18 V
90
110
124
130
VS = ±1.8 V to ±15 V
T = −40°C to +85°C
VS = ±1.8 V to ±15 V
T = −40°C to +85°C
AD8422ARZ
Typ
Max
8
80
2
0.5
0.15
90
8
60
70
0.4
300
500
5
110
130
150
150
0.5
1
2
4
0.2
0.3
0.8
1
AD8422
AD8422BRZ
Min
Typ
Max
Unit
94
dB
114
dB
134
dB
150
dB
89
dB
80
dB
95
dB
100
dB
100
dB
8
nV/√Hz
80
nV/√Hz
2
µV p-p
0.5
µV p-p
0.15
µV p-p
90
110
fA/√Hz
8
pA p-p
25
µV
40
µV
0.3
µV/°C
150
µV
300
µV
2
µV/°C
100
120
120
140
140
160
140
160
0.2
4
0.1
1
dB
dB
dB
dB
0.5
nA
1
nA
pA/°C
0.15
nA
0.3
nA
pA/°C
Rev. 0 | Page 3 of 24

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]