HGT1S12N60C3S 查看數據表（PDF） - Intersil
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HGT1S12N60C3S Datasheet PDF : 6 Pages
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HGTP12N60C3, HGT1S12N60C3S
Typical Performance Curves (Continued)
200
100
VGE = 10V
TJ = 150oC, TC = 75oC
RG = 25Ω, L = 100µH
VGE = 15V
10 fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 1.2oC/W
1
5
10
20
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
2500
2000
FREQUENCY = 1MHz
CIES
1500
1000
500
0
0
CRES
COES
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
100
TJ = 150oC, VGE = 15V, RG = 25Ω, L = 100µH
80
60
LIMITED BY
40
CIRCUIT
20
0
0
100
200
300
400
500
600
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 14. SWITCHING SAFE OPERATING AREA
IG(REF) = 1.276mA, RL = 50Ω, TC = 25oC
600
15
480
12
VCE = 600V
360
9
240
6
VCE = 400V
VCE = 200V
120
3
0
0
0
10
20
30
40
50
60
QG, GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
100
0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
10-5
SINGLE PULSE
10-4
t1
DUTY FACTOR, D = t1 / t2
PD
PEAK TJ = (PD X ZθJC X RθJC) + TC
t2
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
5
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