AD8541AR(2004) 查看數據表（PDF） - Analog Devices

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AD8541AR
(Rev.:2004)

General-Purpose CMOS Rail-to-Rail Amplifiers

Analog Devices 

AD8541/AD8542/AD8544–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (VS = 2.7 V, VCM = 1.35 V, TA = 25؇C, unless otherwise noted.)

Parameter

Symbol

Conditions

Min Typ Max

INPUT CHARACTERISTICS

Offset Voltage

VOS

Input Bias Current

IB

Input Offset Current

IOS

Input Voltage Range

Common-Mode Rejection Ratio

Large Signal Voltage Gain

CMRR

AVO

Offset Voltage Drift

Bias Current Drift

Offset Current Drift

OUTPUT CHARACTERISTICS

Output Voltage High

Output Voltage Low

Output Current

Closed-Loop Output Impedance

POWER SUPPLY

Power Supply Rejection Ratio

Supply Current/Amplifier

DYNAMIC PERFORMANCE

Slew Rate

Settling Time

Gain Bandwidth Product

Phase Margin

DVOS/DT

DIB/DT

DIOS/DT

VOH

VOL

IOUT

± ISC

ZOUT

PSRR

ISY

SR

tS

GBP

Fo

–40∞C £ TA £ +125∞C

–40∞C £ TA £ +85∞C

–40∞C £ TA £ +125∞C

–40∞C £ TA £ +85∞C

–40∞C £ TA £ +125∞C

VCM = 0 V to 2.7 V

–40∞C £ TA £ +125∞C

RL = 100 kW , VO = 0.5 V to 2.2 V

–40∞C £ TA £ +85∞C

–40∞C £ TA £ +125∞C

–40∞C £ TA £ +125∞C

–40∞C £ TA £ +85∞C

–40∞C £ TA £ +125∞C

–40∞C £ TA £ +125∞C

IL = 1 mA

–40∞C £ TA £ +125∞C

IL = 1 mA

–40∞C £ TA £ +125∞C

VOUT = VS – 1 V

f = 200 kHz, AV = 1

VS = 2.5 V to 6 V

–40∞C £ TA £ +125∞C

VO = 0 V

–40∞C £ TA £ +125∞C

RL = 100 kW

To 0.1% (1 V Step)

1

6

7

4

60

100

1,000

0.1 30

50

500

0

2.7

40 45

38

100 500

50

2

4

100

2,000

25

2.575 2.65

2.550

35 100

125

15

± 20

50

65 76

60

38 55

75

0.4 0.75

5

980

63

NOISE PERFORMANCE

Voltage Noise Density

en

f = 1 kHz

40

Current Noise Density

en

f = 10 kHz

in

38

<0.1

Specifications subject to change without notice.

Unit

mV

mV

pA

pA

pA

pA

pA

pA

V

dB

dB

V/mV

V/mV

V/mV

mV/∞C

fA/∞C

fA/∞C

fA/∞C

V

V

mV

mV

mA

mA

W

dB

dB

mA

mA

V/ms

ms

kHz

Degrees

nV/÷Hz

nV/÷Hz

pA/÷Hz

–2–

REV. D

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