ADF4360-7BCPZRL 查看數據表（PDF） - Analog Devices

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ADF4360-7BCPZRL

Integrated Synthesizer and VCO

Analog Devices 

ADF4360-7

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.

Table 3.

Parameter

AVDD to GND1

AVDD to DVDD

VVCO to GND

VVCO to AVDD

Digital I/O Voltage to GND

Analog I/O Voltage to GND

REFIN to GND

Operating Temperature Range

Maximum Junction Temperature

CSP θJA Thermal Impedance

Paddle Soldered

Paddle Not Soldered

Lead Temperature, Soldering

Vapor Phase (60 sec)

Infrared (15 sec)

Rating

−0.3 V to +3.9 V

−0.3 V to +0.3 V

−0.3 V to +3.9 V

−0.3 V to +0.3 V

−0.3 V to VDD + 0.3 V

−0.3 V to VDD + 0.3 V

−0.3 V to VDD + 0.3 V

150°C

50°C/W

88°C/W

215°C

220°C

1 GND = AGND = DGND = 0 V.

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress rat-

ing only; functional operation of the device at these or any

other conditions above those listed in the operational sections

of this specification is not implied. Exposure to absolute maxi-

mum rating conditions for extended periods may affect device

reliability.

This device is a high performance RF integrated circuit with an

ESD rating of <1 kV, and it is ESD sensitive. Proper precautions

should be taken for handling and assembly.

TRANSISTOR COUNT

12543 (CMOS) and 700 (Bipolar)

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate

on the human body and test equipment and can discharge without detection. Although this product features

proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy

electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance

degradation or loss of functionality.

Rev. A | Page 6 of 28

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