N28F001BN-B150 查看數據表（PDF） - Intel

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N28F001BN-B150

1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

Intel 

28F001BX-T 28F001BX-B

NOTES

1 All currents are in RMS unless otherwise noted Typical values at VCC e 5 0V VPP e 12 0V TA e 25 C These currents

are valid for all product versions (packages and speeds)

2 ICCES is specified with the device deselected If the 28F001BX is read while in Erase Suspend mode current draw is the

sum of ICCES and ICCR

3 Erase Programs are inhibited when VPP e VPPL and not guaranteed in the range between VPPH and VPPL

CAPACITANCE(1) TA e 25 C f e 1 MHz

Symbol

Parameter

Max Unit

CIN

COUT

Input Capacitance

8

pF

Output Capacitance 12

pF

NOTE

1 Sampled not 100% tested

Conditions

VIN e 0V

VOUT e 0V

AC INPUT OUTPUT REFERENCE WAVEFORM

290406 – 10

A C test inputs are driven at VOH (2 4 VTTL) for a Logic ‘‘1’’ and VOL (0 45 VTTL) for a Logic ‘‘0’’ Input timing begins at

VIH (2 0 VTTL) and VIL (0 8 VTTL) Output timing ends at VIH and VIL Input rise and fall times (10% to 90%) k 10 ns

STANDARD TEST CONFIGURATION

AC TESTING LOAD CIRCUIT

HIGH SPEED TEST CONFIGURATION

AC TESTING LOAD CIRCUIT

CL e 100 pF

CL Includes Jig Capacitance

RL e 3 3 kX

290406 – 11

CL e 30 pF

CL Includes Jig Capacitance

RL e 3 3 kX

290406 – 23

19

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