ARF744S25 查看數據表（PDF） - Power Semiconductors

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ARF744S25

FAST RECOVERY DIODE

Power Semiconductors 

ARF744 FAST RECOVERY DIODE

FINAL SPECIFICATION apr 97 - ISSUE : 02

FORWARD CHARACTERISTIC

Tj = 150 °C

12000

10000

8000

6000

4000

2000

0

0.6

1.1

1.6

2.1

2.6

Forward Voltage [V]

TRANSIENT THERMAL IMPEDANCE

DOUBLE SIDE COOLED

12.0

10.0

8.0

6.0

4.0

2.0

0.0

0.001 0.01

0.1

1

t[s]

10

100

ANSALDO

SURGE CHARACTERISTIC

Tj = 150 °C

50

45

40

35

30

25

20

15

10

5

0

1

10

100

n° cycles

All the characteristics given in this data sheet are guaranteed only with uniform

clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm

and roughness < 2 µm.

In the interest of product improvement ANSALDO reserves the right to change

any data given in this data sheet at any time without previous notice.

If not stated otherwise the maximum value of ratings (simbols over shaded

background) and characteristics is reported.

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