ADP3404 查看數據表（PDF） - Analog Devices

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ADP3404

GSM Power Management System

Analog Devices 

600

500

VCCA

400 TCXO

FULL LOAD

MLCC CAPS

300

200

REF

100

0

10

100

1k

10k

100k

FREQUENCY – Hz

TPC 13. Output Noise Density

THEORY OF OPERATION

The ADP3404 is a power management chip optimized for use

with GSM baseband chipsets in handset applications. Figure 1

shows a block diagram of the ADP3404.

The ADP3404 contains several blocks:

• Four Low Dropout Regulators (Digital, Analog, Crystal

Oscillator, Real-Time Clock)

• Reset Generator

• Buffered Precision Reference

• SIM Interface Logic Level Translation (3 V/5 V)

• SIM Voltage Supply

• Power On/Off Logic

• Undervoltage Lockout

ADP3404

These functions have traditionally been done either as a discrete

implementation or as a custom ASIC design. ADP3404 combines

the benefits of both worlds by providing an integrated standard

product solution where every block is optimized to operate in a

GSM environment while maintaining a cost competitive solution.

Figure 2 shows the external circuitry associated with the ADP3404.

Only a few support components, mainly decoupling capacitors,

are required.

Input Voltage

The input voltage range for ADP3404 is 3 V to 7 V and optimized

for a single Li-Ion cell or three NiMH/NiCd cells. The thermal

impedance (θJA) of the ADP3404 is 62°C/W for 6-layer boards.

The charging voltage for a high capacity NiMH cell can be as high as

5.5 V. Power dissipation should be calculated at maximum ambient

temperatures and battery voltage in order not to exceed the 125°C

maximum allowable junction temperature. Figure 3 shows the maxi-

mum total LDO output current as a function of ambient temperature

and battery voltage.

However, high battery voltages normally occur only when the

battery is being charged and the handset is not in conversation

mode. In this mode there is a relatively light load on the LDOs.

A fully charged Li-Ion battery is 4.25 V, where the LDOs deliver

the maximum 240 mA up to the max 85°C ambient temperature.

ANALOG GND

DIGITAL AND

SIM GND

100nF

0.22␮F

100nF

10⍀

2.2␮F

1 LI-ION

OR

3 NIMH

CHARGER

INPUT

10␮F

2.2␮F

GSM

PROCESSOR

R1

R2

1 RESCAP

CAP+ 28

2 DGND

VSIM 27

3 VTCXO

CLK 26

4 RESET

SIMON 25

5 REFOUT

SIMPROG 24

6 VCCA ADP3404 RST 23

7 AGND

I/O 22

8 VBAT

SIMGND 21

9 VCC

CLKIN 20

10 PWRONKEY

RESETIN 19

11 ANALOGON

DATAIO 18

12 PWRONIN

SIMBAT 17

13 ROWX

CAP– 16

14 CHRON

VRTC 15

TSSOP-28

10␮F

CLK TO SIM CARD

GSM

PROCESSOR

RST TO SIM CARD

I/O TO SIM CARD

SIM PINS

OF

GSM PROCESSOR

100nF

100nF

10␮F

CAPACITOR-

TYPE BACK-UP

COIN CELL

Figure 2. Typical Application Circuit

REV. 0

–9–

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