GS8180D18D-250(2002) 查看數據表（PDF） - Giga Semiconductor

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GS8180D18D-250
(Rev.:2002)

18Mb Σ2x2B4 SigmaQuad SRAM

Giga Semiconductor 

Preliminary

GS8180D18D-333/300/250/200

Parameter

-333

Symbol

Min Max

-300

Min Max

-250

Min Max

CQ, CQ Clock High Pulse Width

tCQHCQL tKHKL ± 0.1

tKHKL ± 0.1

tKHKL ± 0.1

CQ, CQ Clock Low Pulse Width

tCQLCQH tKLKH ± 0.1

tKLKH ± 0.1

tKLKH ± 0.1

CQ, CQ Clock High Pulse Width

tCQHCQL1 tCHCL ± 0.1

tCHCL ± 0.1

tCHCL ± 0.1

CQ, CQ Clock Low Pulse Width

tCQLCQH1 tCLCH ± 0.1

tCLCH ± 0.1

tCLCH ± 0.1

Notes:

1. These parameters apply to control inputs R and W.

2. These parameters are guaranteed by design and characterization. Not 100% tested.

3. These parameters are measured at ±50mV from steady state voltage.

4. tKHKH Max is specified by tKHKH Min. tCHCH Max is specified by tCHCH Min.

-200

Min Max

tKHKL ± 0.1

tKLKH ± 0.1

tCHCL ± 0.1

tCLCH ± 0.1

Units Notes

ns 2

ns 2

ns 2

ns 2

Rev: 2.00f 6/2002

18/27

© 2002, Giga Semiconductor, Inc.

Specifications cited are design targets and are subject to change without notice. For latest documentation contact your GSI representative.

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