ADT7484A 查看數據表（PDF） - ON Semiconductor
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ADT7484A Datasheet PDF : 14 Pages
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ADT7484A/ADT7486A
Temperature Measurement
The ADT7484A/ADT7486A each have two dedicated
temperature measurement channels: one for measuring the
temperature of an on-chip band gap temperature sensor, and
one for measuring the temperature of a remote diode, usually
located in the CPU or GPU.
The ADT7484A monitors one local and one remote
temperature channel, whereas the ADT7486A monitors one
local and two remote temperature channels. Monitoring of
each of the channels is done in a round-robin sequence. The
monitoring sequence is in the order shown in Table 11.
Table 6. Temperature Monitoring Sequence
Channel
Number
Measurement
Conversion
Time (ms)
0
Local Temperature
12
1
Remote Temperature 1
38
2
Remote Temperature 2
38
(ADT7486A only)
Temperature Measurement Method
A simple method for measuring temperature is to exploit
the negative temperature coefficient of a diode by measuring
the base-emitter voltage (VBE) of a transistor operated at
constant current. Unfortunately, this technique requires
calibration to null the effect of the absolute value of VBE,
which varies from device to device.
The technique used in the ADT7484A/ADT7486A
measures the change in VBE when the device is operated at
three different currents.
Figure 16 shows the input signal conditioning used to
measure the output of a remote temperature sensor. This
figure shows the remote sensor as a substrate transistor,
which is provided for temperature monitoring on some
microprocessors, but it could also be a discrete transistor. If
a discrete transistor is used, the collector is not grounded and
should be linked to the base. To prevent ground noise from
interfering with the measurement, the more negative
terminal of the sensor is not referenced to ground, but is
biased above ground by an internal diode at the D1− input.
If the sensor is operating in an extremely noisy environment,
C1 can be added as a noise filter. Its value should not exceed
1000 pF.
To measure DVBE, the operating current through the
sensor is switched between three related currents. Figure 16
shows N1 x I and N2 x I as different multiples of the current
I. The currents through the temperature diode are switched
between I and N1 x I, giving DVBE1, and then between I and
N2 x I, giving DVBE2. The temperature can then be
calculated using the two DVBE measurements. This method
can also cancel the effect of series resistance on the
temperature measurement. The resulting DVBE waveforms
are passed through a 65 kHz low-pass filter to remove noise
and then through a chopper-stabilized amplifier to amplify
and rectify the waveform, producing a dc voltage
proportional to DVBE. The ADC digitizes this voltage, and
a temperature measurement is produced. To reduce the
effects of noise, digital filtering is performed by averaging
the results of 16 measurement cycles for low conversion
rates. Signal conditioning and measurement of the internal
temperature sensor is performed in the same manner.
VDD
I
N1 x I N2 x I IBIAS
D+
REMOTE
C1*
SENSING
TRANSISTOR
D–
BIAS
DIODE
LOW−PASS FILTER
fC = 65kHz
VOUT+
TO ADC
VOUT–
*CAPACITOR C1 IS OPTIONAL. IT SHOULD ONLY BE USED IN NOISY ENVIRONMENTS.
Figure 14. Signal Conditioning for Remote Diode
Temperature Sensors
Reading Temperature Measurements
The temperature measurement command codes are
detailed in Table 12. The temperature data returned is two
bytes in little endian format, that is, LSB before MSB. All
temperatures can be read together by using Command Code
0x00 with a read length of 0x04. The command codes and
returned data are described in Table 12.
Table 7. Temperature Channel Command Codes
Temp
Channel
Command
Code
Returned Data
Internal
External 1
External 2
All Temps
0x00
0x01
0x02
0x00
LSB, MSB
LSB, MSB
LSB, MSB
Internal LSB, Internal MSB;
External 1 LSB, External 1 MSB;
External 2 LSB, External 2 MSB
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