DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

HMBD2003 查看數據表(PDF) - Hi-Sincerity Microelectronics

零件编号
产品描述 (功能)
生产厂家
HMBD2003
Hi-Sincerity
Hi-Sincerity Microelectronics Hi-Sincerity
HMBD2003 Datasheet PDF : 2 Pages
1 2
HI-SINCERITY
MICROELECTRONICS CORP.
HMBD2003\C\S
Description
The HMBD2003\C\S are general purpose diodes fabricated in planar
technology, and encapsulated in small plastic SMD SOT-23 package.
Features
Small plastic SMD package
Switching speed: max. 50 nS
General application:
Continuous reverse voltage: Max. 200 V
Repetitive peak reverse voltage: Max. 250 V
Repetitive peak forward current: Max. 625 mA
Absolute Maximum Ratings (Ta=25°C)
Characteristic
HMBD2003 Repetitive Peak Reverse Voltage
HMBD2003C Repetitive Peak Reverse Voltage
HMBD2003S Repetitive Peak Reverse Voltage
HMBD2003 Continuous reverse voltage
HMBD2003C Continuous reverse voltage
HMBD2003S Continuous reverse voltage
Forward Continuous Current at Ta=25°C
Repetitive Peak Forward Current at Ta=25°C
Surge Forward Current at t =1mS, Ta=25°C
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VRRM
VR
lF
IFRM
IFSM
PD
Tj
Tstg
Characteristics (Ta=25°C)
Characteristic
Forward Voltage
HMBD2003 Reverse Current
HMBD2003C Reverse Current
HMBD2003S Reverse Current
Total Capacitance
Reverse Recovery Time
BVR
Symbol
VF(1)
VF(2)
IR
CT
Trr
BVR
Condition
IF=100mA
IF=200mA
VR=200V
VR=200V
VR=200V
VR=0V, f=1MHz
IF=30mA to IR=30mA
RL=100measured at
IR=3mA
IR=100uA
Spec. No. : HE6857
Issued Date : 1994.01.25
Revised Date : 2002.10.25
Page No. : 1/2
SOT-23
Value
Unit
250
250
V
250
200
200
V
200
225
mA
625
mA
1
A
250 Max
mV
150
°C
-65~+150
°C
Min Max Unit
-
-
1
1.25
V
-
100
-
100 nA
-
100
5
-
pF
50
-
nS
250
-
V
HMBD2003, HMBD2003C, HMBD2003S
HSMC Product Specification

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]