ECP052G 查看數據表（PDF） - WJ Communications => Triquint

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ECP052G

½ Watt, High Linearity InGaP HBT Amplifier

WJ Communications => Triquint 

AH116 / ECP052G

1/2 Watt, High Linearity InGaP HBT Amplifier Product Information

Product Features

Product Description

Functional Diagram

• 800 – 1000 MHz

• +28 dBm P1dB

• +43 dBm Output IP3

• 17.5 dB Gain @ 900 MHz

• Single Positive Supply (+5 V)

• MTTF >100 Years

• Lead-free/green/RoHS-compliant

SOIC-8 SMT Pkg.

Applications

• Mobile Infrastructure

• Final Stage Amplifier for

Repeaters

The AH116 / ECP052 is a high dynamic range driver

amplifier in a low-cost surface mount package. The

InGaP/GaAs HBT is able to achieve high performance for

various narrow-band tuned application circuits with up to

+43 dBm OIP3 and +28 dBm of compressed 1-dB power

and is housed in a lead-free/green/RoHS-compliant SOIC-8

package. All devices are 100% RF and DC tested.

The product is targeted for use as driver amplifiers for

wireless infrastructure where high linearity and medium

power is required. The internal active bias allows the

AH116 / ECP052 to maintain high linearity over

temperature and operate directly off a +5 V supply. This

combination makes the device an excellent fit for

transceiver line cards and power amplifiers in current and

next generation multi-carrier 3G base stations.

1

8

2

7

3

6

4

5

Function

Vref

Input / Base

Output / Collector

Vbias

GND

N/C or GND

Pin No.

1

3

6, 7

8

Backside

2, 4, 5

Specifications

Parameters

Frequency Range

Gain

Input R.L.

Output R.L.

Output P1dB

Output IP3 (2)

IS-95A Channel Power

@ -45 dBc ACPR, 900 MHz

Noise Figure

Operating Current Range (3)

Device Voltage

Units

MHz

dB

dB

dB

dBm

dBm

dBm

dB

mA

V

Min

15

+27

+42

200

Typ

900

17.5

18

7

+28.7

+43

+23

7

250

+5

Max

300

Test conditions unless otherwise noted.

1. T = 25ºC, Vsupply = +5 V, Frequency = 900 MHz, in tuned application circuit.

2. 3OIP measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. The

suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

3. This corresponds to the quiescent current or operating current under small-signal conditions. It is

expected that the current can increase up to 300mA at P1dB.

Typical Performance (1)

Parameters

Frequency

Gain

S11

S22

Output P1dB

Output IP3 (2)

IS-95A Channel Power

@ -45 dBc ACPR,

Noise Figure

Supply Bias

Units

MHz

dB

dB

dB

dBm

dBm

dBm

dB

Typical

900

17.5

-18

-7

+28.7

+43

+23

7

+5 V @ 250 mA

Absolute Maximum Rating

Parameter

Operating Case Temperature

Storage Temperature

RF Input Power (continuous)

Device Voltage

Device Current

Device Power

Junction Temperature

Rating

-40 to +85 °C

-65 to +150 °C

+22 dBm

+8 V

400 mA

2W

+250 °C

Operation of this device above any of these parameters may cause permanent damage.

Ordering Information

Part No.

Description

AH116-S8*

ECP052G*

AH116-S8G

AH116-S8PCB900

½ Watt, High Linearity InGaP HBT Amplifier

(lead-tin SOIC-8 Pkg)

½ Watt, High Linearity InGaP HBT Amplifier

(lead-tin SOIC-8 Pkg)

½ Watt, High Linearity InGaP HBT Amplifier

(lead-free/green/RoHS-compliant SOIC-8 Pkg)

900 MHz Evaluation Board

* This package is being phased out in favor of the green package type which is backwards compatible for

existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website.

Specifications and information are subject to change without notice.

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

Page 1 of 6 June 2005

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