AH278Z4-E1 查看數據表（PDF） - BCD Semiconductor
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AH278Z4-E1 Datasheet PDF : 11 Pages
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HIGH VOLTAGE HALL EFFECT LATCH
Electrical Characteristics
(TA=25oC, VCC=24V, unless otherwise specified)
Parameter
Symbol
Test Condition
Low Supply Voltage
Output Saturation Voltage
Output Saturation Voltage
Output Leakage Current
Supply Current
Output Rise Time
Output Fall Time
Switch Time Differential
Output Zener Breakdown Voltage
VCE
VSAT1
VSAT2
IOL
ICC
tr
tf
∆t
VZO
VCC=5V, IO=100mA
IO=500mA
IO=300mA
VDO,VDOB=24V
VCC=24V, Output Open
RL=820Ω, CL=20pF
RL=820Ω, CL=20pF
RL=820Ω, CL=20pF
Magnetic Characteristics
(TA=25oC)
Parameter
Symbol
Grade
Min
Operating Point
BOP
A
10
B
Releasing Point
BRP
A
-70
B
-100
Hysteresis
BHYS
Min
Typ
80
Data Sheet
AH278
Typ Max Unit
0.1
0.3
V
0.5
0.8
V
0.25
0.5
V
0.1
10
µA
12.5
16
mA
3.0
10
µs
0.3
1.5
µs
3.0
10
µs
60
V
Max
Unit
70
Gauss
100
Gauss
-10
Gauss
Gauss
Gauss
VDO (V)
Off-state
High
Turn off
BHYS
Turn on
VSAT
N
Feb. 2007 Rev. 1. 1
Low
On-state
BRP
0
BOP
S
Magnetic Flux Density (Gauss)
BCD Semiconductor Manufacturing Limited
5
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