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LC35V256ET 查看數據表(PDF) - SANYO -> Panasonic

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LC35V256ET Datasheet PDF : 6 Pages
1 2 3 4 5 6
LC35V256EM, ET70W
DC Electrical Characteristics at Ta = –10 to +70°C, VCC = 3.0 to 3.6 V
Parameter
Symbol
Conditions
Input leakage current
Output leakage current
Output high-level voltage
Output low-level voltage
Operating current drain
CMOS inputs
ILI
ILO
VOH1
VOH2
VOL1
VOL2
ICCA2
ICCA3
VIN = 0 to VCC
VCE = VIH or VOE = VIH or VWE = VIL
VI/O = 0 to VCC
IOH1 = –2.0 mA
IOH2 = –100 µA
IOL1 = 2.0 mA
IOL2 = 100 µA
VCE = VIL, II/O = 0 mA, VIN = VIH or VIL
VCE = VIL, VIN = VIH or VIL
II/O = 0 mA, DUTY 100 %
min cycle
1 µs cycle
Standby mode
current drain
VCC – 0.2 V/
0.2 V inputs
ICCS1
VCE VCC – 0.2 V,
VIN = 0 to VCC
Ta 25°C
Ta 60°C
Ta 70°C
CMOS inputs
ICCS2 VCE = VIH, VIN = 0 to VCC
Note: * Reference values when VCC = 3.3 V and Ta = 25°C.
AC Electrical Characteristics at Ta = –10 to +70°C, VCC = 3.0 to 3.6 V
AC test conditions
Input pulse voltage levels: 0.2 VCC to 0.8 VCC
Input rise and fall times: 5 ns
Input and output timing levels: 1/2 VCC
Output load: 30 pF (including the jig capacitance)
min
–1.0
–1.0
VCC – 0.4
VCC – 0.1
Ratings
typ
20
1.5
0.01
Read Cycle
Parameter
Read cycle time
Address access time
CE access time
OE access time
Output hold time
CE output enable time
OE output enable time
CE output disable time
OE output disable time
Write Cycle
Symbol
tRC
tAA
tCA
tOA
tOH
tCOE
tOOE
tCOD
tOOD
min
70
10
10
5
max
Unit
ns
70 ns
70 ns
50 ns
ns
ns
ns
35 ns
30 ns
Parameter
Write cycle time
Address setup time
Write pulse width
CE setup time
Write recovery time
CE write recovery time
Data setup time
Data hold time
CE data hold time
WE output enable time
WE output disable time
Symbol
tWC
tAS
tWP
tCW
tWR
tWR1
tDS
tDH
tDH1
tWOE
tWOD
min
70
0
55
60
0
0
50
0
0
5
max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
35 ns
Unit
max
+1.0 µA
+1.0 µA
V
V
0.4 V
0.4 V
1.2 mA
25 mA
2.5 mA
µA
0.8 µA
4.0 µA
0.4 mA
No. 6303-4/6

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