ALD1101BPAL 查看數據表（PDF） - Advanced Linear Devices
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ALD1101BPAL Datasheet PDF : 6 Pages
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ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS
Gate-source voltage, VGS
Power dissipation
Operating temperature range SAL, PALpackages
DA package
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
10.6V
10.6V
500mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
Parameter
Gate Threshold
Voltage
Symbol
VT
ALD 1101A
ALD1101B
ALD1101
Min Typ Max Min Typ Max Min Typ Max Unit
0.4 0.7 1.0 0.4 0.7 1.0 0.4 0.7 1.0 V
Test
Conditions
IDS = 10µA VGS = VDS
Offset Voltage
VGS1 - VGS2
VOS
Gate Threshold TCVT
Temperature Drift
2
-1.2
5
-1.2
10 mV
IDS = 100µA VGS = VDS
-1.2
mV/°C
On Drain Current IDS (ON)
Transconductance Gfs
Mismatch
∆Gfs
Output
Conductance
GOS
Drain Source
ON Resistance
RDS(ON)
25 40
5 10
0.5
200
50
25 40
5 10
0.5
200
25 40
5 10
0.5
200
75
50 75
50
mA
VGS = VDS = 5V
mmho VDS = 5V IDS= 10mA
%
µmho VDS = 5V IDS = 10mA
75 Ω
VDS = 0.1V VGS = 5V
Drain Source
ON Resistance ∆RDS(ON)
0.5
Mismatch
0.5
0.5
%
VDS = 0.1V VGS = 5V
Drain Source
Breakdown
Voltage
BVDSS
12
12
12
V
IDS = 10µA VGS =0V
Off Drain Current IDS(OFF)
Gate Leakage
Current
Input
Capacitance
IGSS
CISS
0.1
4
4
1 50
10
6 10
0.1 4
4
1 50
10
6 10
0.1
4 nA
VDS =12V VGS = 0V
4 µA
TA = 125°C
1
50 pA
VDS =0V VGS =12V
10 nA
TA = 125°C
6 10 pF
ALD1101A/ALD1101B/ALD1101
Advanced Linear Devices
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