IS61SF51218D 查看數據表（PDF） - Integrated Silicon Solution

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IS61SF51218D

256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM

Integrated Silicon Solution 

IS61SF25632T/D IS61LF25632T/D

IS61SF25636T/D IS61LF25636T/D

IS61SF51218T/D IS61LF51218T/D

ISSI ®

WRITE CYCLE TIMING

CLK

ADSP

ADSC

ADV

A17-A0

GW

BWE

BWd-BWa

CE

CE2

CE2

tKC

tKH

tKL

tSS

tSH

ADV must be inactive for ADSP Write tAVS

tAS

tAH

WR1

tWS

WR2

tWH

ADSP is blocked by CE1 inactive

ADSC initiate Write

tAVH

WR3

tWS

tWH

tWS

tWH

tWS

tWH

WR1

WR2

WR3

tCES

tCEH

CE1 Masks ADSP

tCES

tCEH

tCES

tCEH

CE2 and CE3 only sampled with ADSP or ADSC

Unselected with CE2

OE

DATAOUT

High-Z

tDS

tDH BW4-BW1 only are applied to first cycle of WR2

DATAIN

High-Z

1a

2a

2b

2c

2d

3a

Single Write

Burst Write

Write

Unselected

16

Integrated Silicon Solution, Inc. — 1-800-379-4774

PRELIMINARY INFORMATION Rev. 00A

04/17/01

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