UPD43256BCZ-85L 查看數據表（PDF） - NEC => Renesas Technology

零件编号

产品描述 (功能)

生产厂家

UPD43256BCZ-85L

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT

NEC => Renesas Technology 

DATA SHEET

MOS INTEGRATED CIRCUIT

µPD43256B

256K-BIT CMOS STATIC RAM

32K-WORD BY 8-BIT

Description

The µPD43256B is a high speed, low power, and 262, 144 bits (32,768 words by 8 bits) CMOS static RAM.

Battery backup is available (L, LL, A, and B versions). And A and B versions are wide voltage operations.

The µPD43256B is packed in 28-pin plastic DIP, 28-pin plastic SOP and 28-pin plastic TSOP (I).

Features

• 32,768 words by 8 bits organization

• Fast access time: 70, 85, 100, 120, 150 ns (MAX.)

• Wide voltage range (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V)

• 2 V data retention

• OE input for easy application

Part number

Access time

ns (MAX.)

µPD43256B-L

70, 85

µPD43256B-LL

70, 85

µPD43256B-A

85, 100Note 2, 120Note 2

µPD43256B-BNote 2 100, 120, 150

Operating

supply voltage

V

4.5 to 5.5

3.0 to 5.5

2.7 to 5.5

Operating

temperature

°C

0 to 70

Standby

supply current

µA (MAX.)

50

15

Data retention

supply currentNote 1

µA (MAX.)

3

2

Notes 1. TA ≤ 40 ˚C, VCC = 3 V

2. Access time : 85 ns (MAX.) (VCC = 4.5 to 5.5 V)

Version X and P

This data sheet can be applied to the version X and P. Each version is identified with its lot number. Letter X in

the fifth character position in a lot number signifies version X, letter P, version P.

D43256B

JAPAN

Lot number

The information in this document is subject to change without notice.

Document No. M10770EJ9V0DS00 (9th edition)

Date Published May 1997 N

The mark shows major revised points.

Printed in Japan

©

1990, 1993, 1994

Share Link: