NT512D64S8HA0G-75B 查看數據表（PDF） - Nanya Technology

零件编号

产品描述 (功能)

生产厂家

NT512D64S8HA0G-75B

184pin Two Bank Unbuffered DDR SDRAM MODULE

Nanya Technology 

NT512D64S8HAAG

512MB : 64M x 64

PC2100 / PC1600 Unbuffered DIMM

184pin Two Bank Unbuffered DDR SDRAM MODULE

Features

• 184-Pin Unbuffered 8-Byte Dual In-Line Memory Module

• 64Mx64 Double Data Rate (DDR) SDRAM DIMM

• Performance:

PC1600 PC2100

Speed Sort

- 8B - 75B - 7K Unit

DIMM CAS Latency

2

2.5

2

f CK Clock Frequency

100 133 133 MHz

t CK Clock Cycle

10

7.5

7.5 ns

f DQ DQ Burst Frequency 200 266 266 MHz

• Intended for 100 MHz and 133 MHz applications

• Inputs and outputs are SSTL-2 compatible

• VDD = 2.5Volt ± 0.2, VDDQ = 2.5Volt ± 0.2

• Single Pulsed RAS interface

• SDRAMs have 4 internal banks for concurrent operation

• Module has two physical banks

• Differential clock inputs

• Data is read or written on both clock edges

• DRAM DLL aligns DQ and DQS transitions with clock

transitions.

• Address and control signals are fully synchronous to positive

clock edge

• Programmable Operation:

- DIMM CAS Latency: 2, 2.5

- Burst Type: Sequential or Interleave

- Burst Length: 2, 4, 8

- Operation: Burst Read and Write

• Auto-Refresh (CBR) and Self-Refresh Modes

• Automatic and controlled precharge commands

• 13/10/2 Addressing (row/column/bank)

• 7.8 µs Max. Average Periodic Refresh Interval

• Serial Presence Detect

• Gold contacts

• SDRAMs in 66-pin TSOP Type II Package

Description

NT512D64S8HA0G is an unbuffered 184-Pin Double Data Rate (DDR) Synchronous DRAM Dual In-Line Memory Module (DIMM),

organized as a two-bank high-speed memory array. The 64Mx64 module is a dual-bank DIMM that uses sixteen 32Mx8 DDR

SDRAMs in 400 mil TSOP packages. The DIMM achieves high-speed data transfer rates of up to 266MHz. The DIMM is intended for use

in applications operating from 100 MHz to 133 MHz clock speeds with data rates of 200 to 266 MHz. Clock enable CKE0 and/or CKE1

controls all devices on the DIMM.

Prior to any access operation, the device CAS latency and burst type/ length/operation type must be programmed into the DIMM by

address inputs A0-A12 and I/O inputs BA0 and BA1 using the mode register set cycle.

These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common

design files minimizes electrical variation between suppliers.

The DIMM uses serial presence detects implemented via a serial EEPROM using the two-pin IIC protocol. The first 128 bytes of serial PD

data are programmed and locked during module assembly. The last 128 bytes are available to the customer.

All NANYA 184 DDR SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long space-saving footprint.

Ordering Information

Part Number

NT512D64S8HA0G-7K

NT512D64S8HA0G-75B

NT512D64S8HA0G-8B

Speed

143MHz (7ns @ CL = 2.5)

133MHz (7.5ns @ CL= 2)

133MHz (7.5ns @ CL= 2.5)

100MHz (10ns @ CL = 2)

125MHz (8ns @ CL = 2.5)

100MHz (10ns @ CL = 2)

PC2100

Organization

PC2100

64Mx64

PC1600

Leads

Gold

Power

2.5V

REV 1.0 06 / 2002

1

© NANYA TECHNOLOGY CORP.

NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

Share Link: