HE8050S 查看數據表（PDF） - Hi-Sincerity Microelectronics
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HE8050S Datasheet PDF : 4 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
HE8050S
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HE8050S is designed for general purpose amplifier applications.
Spec. No. : HE6110
Issued Date : 1992.09.30
Revised Date : 2001.07.18
Page No. : 1/4
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 25 V
VCEO Collector to Emitter Voltage ..................................................................................... 20 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current ....................................................................................................... 700 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
25
-
BVCEO
20
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
100
-
*hFE2
-
140
fT
150
-
Cob
-
-
Max.
-
-
-
1
100
0.5
1
500
-
-
10
Classifications of hFE
Rank
hFE1
hFE2
C
100-180
-
C1
100-180
>50
Unit
Test Conditions
V
V
V
uA
nA
V
V
MHz
pF
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=20V, IE=0
VEB=5V, IC=0
IC=0.5A, IB=50mA
VCE=1V, IC=150mA
VCE=1V, IC=150mA
VCE=1V, IC=500mA
VCE=10V, IC=20mA, f=100MHz
VCB=10V, f=1MHz, IE=0
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
D
160-300
-
D1
160-300
>50
E
250-500
-
HE8050S
HSMC Product Specification
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