AM29LV400BB-120 查看數據表（PDF） - Advanced Micro Devices

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AM29LV400BB-120

4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory

Advanced Micro Devices 

SUPPLEMENT

PHYSICAL SPECIFICATIONS

Die dimensions . . . . . . . . . . . . . . 185 mils x 140 mils

. . . . . . . . . . . . . . . . . . . . . . . . . . 4.70 mm x 3.56 mm

Die Thickness. . . . . . . . . . . . . . . . . . . . . . . . . .500 µm

Bond Pad Size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils

. . . . . . . . . . . . . . . . . . . . . . . . . 115.9 µm x 115.9 µm

Pad Area Free of Passivation . . . . . . . . . .13.99 mils2

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 µm2

Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43

Bond Pad Metalization . . . . . . . . . . . . . . . . . . . . Al/Cu

Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,

may be grounded (optional)

Passivation . . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride

DC OPERATING CONDITIONS

VCC (Supply Voltage) . . . . . . . . . . . . . . . 2.7 V to 3.6 V

Operating Temperature

Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C

Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C

Extended . . . . . . . . . . . . . . . . . . –55°C to +125°C

MANUFACTURING INFORMATION

Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . . FASL

Test . . . . . . . . . . . . . . . . . . . . . . . . Penang, Malaysia

Manufacturing ID (Top Boot) . . . . . . . . . . . . .98F03AK

(Bottom Boot). . . . . . . . 98F03ABK

Preparation for Shipment . . . . . . . . Penang, Malaysia

Fabrication Process . . . . . . . . . . . . . . . . . . . . CS39S

Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

SPECIAL HANDLING INSTRUCTIONS

Processing

Do not expose KGD products to ultraviolet light or

process them at temperatures greater than 250°C.

Failure to adhere to these handling instructions will

result in irreparable damage to the devices. For best

yield, AMD recommends assembly in a Class 10K

clean room with 30% to 60% relative humidity.

Storage

Store at a maximum temperature of 30°C in a nitrogen-

purged cabinet or vacuum-sealed bag. Observe all

standard ESD handling procedures.

TEST CONDITIONS

3.3 V

Device

Under

Test

CL

6.2 kΩ

2.7 kΩ

Test Condition

Input timing measurement

reference levels

Output timing measurement

reference levels

60R,

70, 80 90, 120 Unit

1.5

V

1.5

V

Note:Diodes are IN3064 or equivalent

Figure 1. Test Setup

Table 1. Test Specifications

Test Condition

60R,

70, 80 90, 120 Unit

Output Load

1 TTL gate

Output Load Capacitance, CL

(including jig capacitance)

30

100

pF

Input Rise and Fall Times

5

ns

Input Pulse Levels

0.0–3.0

V

Am29LV400B Known Good Die

9

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