AMP01 查看數據表（PDF） - Analog Devices
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AMP01 Datasheet PDF : 30 Pages
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Data Sheet
AMP01
WAFER TEST LIMITS (AMP01NBC)
VS = ±15 V, RS = 10 kΩ, RL = 2 kΩ, TA = 25°C, unless otherwise noted. Electrical tests are performed at wafer probe to the limits shown.
Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult
the factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
Table 5.
Parameter
OFFSET VOLTAGE
Input Offset Voltage
Input Offset Voltage Drift
Output Offset Voltage
Output Offset Voltage Drift
Offset Referred to Input vs. Positive Supply
Offset Referred to Input vs. Negative Supply
INPUT CURRENT
Input Bias Current
Input Bias Current Drift
Input Offset Current
Input Offset Current Drift
INPUT
Input Voltage Range
Common-Mode Rejection
GAIN
Gain Equation Accuracy
OUTPUT RATING
Output Voltage Swing
Output Current Limit
Quiescent Current
NOISE
Nonlinearity
Voltage Noise Density
Current Noise Density
Voltage Noise
Current Noise
DYNAMIC RESPONSE
Small-Signal Bandwidth (−3 dB)
Slew Rate
Settling Time
Symbol Test Conditions/Comments
VIOS
TCVIOS
VOOS
TCVOOS
PSR
PSR
RG = ∞
V+ = 5 V to 15 V
G = 1000
G = 100
G = 10
G=1
V– = –5 V to –15 V
G = 1000
G = 100
G = 10
G=1
IB
TCIB
IOS
TCIOS
IVR
Guaranteed by CMR tests
CMR
VCM = ±10 V
G = 1000
G = 100
G = 10
G=1
G = (20 × RS)/RG
VOUT
RL = 2 kΩ
RL = 500 kΩ
RL = 50 kΩ
Output to ground short
Output to ground short
IQ
+V linked to +VOP
−V linked to −VOP
en
in
en p-p
in p-p
BW
G = 1000
G = 1000, fO = 1 kHz
G = 1000, fO = 1 kHz
G = 1000, 0.1 Hz to 10 Hz
G = 1000, 0.1 Hz to 10 Hz
SR
G = 1000
tS
G = 10
To 0.01%, 20 V step, G = 1000
Min Typ
Max Unit
60
μV
0.15
μV/°C
4
mV
20
μV/°C
120
dB
110
dB
95
dB
75
dB
105
dB
90
dB
70
dB
50
dB
4
nA
40
pA/°C
1
nA
3
pA/°C
±10 V min
125
dB
120
dB
100
dB
85
dB
0.6 %
−13
−13
−2.5
−60
−120
+13 V
+13 V
+2.5 V
+60 mA
+120 mA
4.8 mA
4.8 mA
0.0007
5
0.15
0.12
2
%
nV/√Hz
pA/√Hz
μV p-p
pA p-p
26
kHz
4.5
V/μs
50
μs
Rev. E | Page 9 of 29
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