AMMC-6222-W10 查看數據表（PDF） - Avago Technologies
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AMMC-6222-W10 Datasheet PDF : 12 Pages
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Absolute Maximum Ratings (1)
Parameters/Condition
Drain to Ground Voltage
Gate-Drain Voltage
Drain Current
RF CW Input Power Max
Max channel temperature
Storage temperature
Maximum Assembly Temp
Symbol Unit
Vdd
V
Vgd
V
Idd
mA
Pin
dBm
Tch
C
Tstg
C
Tmax C
Max
5.5
-10
170
10
+150
-65 +150
260 for 20s
(1) Operation in excess of any of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vdd, Vgd, Idd and Pin were determined at
an ambient temperature of 25°C unless noted otherwise.
DC Specifications/ Physical Properties (2)
Parameter and Test Condition
Drain Supply Current under any RF power drive and temp. (Vd=4.0 V)
Drain Supply Voltage
Thermal Resistance(3)
Symbol Unit
Min
Idd
mA
80
Vd
V
3
θjc
°C/W
Typ
Max
120
160
4
5
31.4
(2) Ambient operational temperature TA=25°C unless noted
(3) Channel-to-backside Thermal Resistance (Tchannel = 34°C) as measured using infrared microscopy. Thermal Resistance at backside temp. (Tb) = 25°C calculated from
measured data.
AMMC-6222 RF Specifications
TA= 25°C, Vdd = 4.0 V, Idd=120mA, Zo=50 W
Parameters and Test Conditions
Drain Current
Small-Signal Gain[4]
Noise Figure into 50W [4]
Output Power at 1dB Gain Compression
Output Third Order Intercept Point
Isolation
Input Return Loss
Output Return Loss
Symbol
Idd
Gain
NF
P-1dB
OIP3
Iso
RLin
RLout
Freq
Unit (GHz)
mA
dB 9, 12, 17
dB 9
12
17
dBm
dBm 9, 12, 17
dB
dB
dB
High Output
Power Configuration
Min
Typical Max
120
20
26
2.7
2.8
2.5
2.8
2.7
2.8
13
15.5
26
28
-50
-10
-10
Low Output
Power Configuration
Min Typical Max
95
24
2.4
2.4
2.4
15
27
-50
-10
-10
(4) All tested parameters guaranteed with measurement accuracy ± 2dB for gain and P1dB, ±0.8dB for NF and ±5dBm for OPI3 in the high output power configuration.
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