AMMC-6241-W50(2006) 查看數據表（PDF） - Avago Technologies
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AMMC-6241-W50 Datasheet PDF : 8 Pages
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AMMC-6241 DC Specifications/Physical Properties [1]
Sym bol
Id
q ch-b
Param eters and Test Conditions
Drain Supply Current (under any RF power drive an d tem perature) (V d=3.0
V)
Therm al Resistance[2] (Backside tem perature, Tb = 25°C )
Units M in. Typ.
mA
60
°C /W
25
Max.
80
AMMC-6241 RF Specifications [3, 4, 5]
TA= 25°C, Vd=3.0 V, Id(Q)=60 mA, Zin=Zo=50 Ω
Parameters and
Symbol Test Conditions
Units Minimum
Typical
Maximum
Sigma
Gain Small-signal Gain[6]
dB 26-35 GHz = 20 26-37 GHz = 21
1.0
35-40 GHz = 18.5 37-40 GHz = 19.5
NF
Noise Figure into 50Ω
dB
26-37 GHz = 2.7 26-37 GHz = 3.0 0.05
37-40 GHz = 3.0 37-40 GHz = 3.3
P-1dB
Output Power at 1dB
dBm
+10
Gain Compression
OIP3 Third Order Intercept Point; dBm
+20
∆f=100MHz; Pin=-35dBm
RLin Input Return Loss[6]
dB
-13
-11
0.40
RLout Output Return Loss[6]
dB
-16
-12
0.50
Isol
Reverse Isolation[6]
dB
-40
0.50
Notes:
1. Ambient operational temperature TA=25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (qch-b) = 26°C/W at Tchannel (Tc) = 34°C as measured using infrared microscopy. Thermal
Resistance at backside temperature (Tb) = 25°C calculated from measured data.
3. Small/Large -signal data measured in wafer form TA = 25°C.
4. 100% on-wafer RF test is done at frequency =30, 32, and 38 GHz.
5. Specifications are derived from measurements in a 50 W test environment. Aspects of the amplifier performance may be improved over a
more narrow bandwidth by application of additional conjugate, linearity, or low noise (Gopt) matching.
6. As derived from measured s-parameters
USL
LSL
USL
2.6
2.7
2.8
2.9
19
20
2.8 2.9 3 3.1 3.2 3.3
Noise Figure at 32 GHz
Gain at 38 GHz
Noise Figure at 38GHz
Typical distribution of Small Signal Gain, Noise Figure, and Return Loss. Based on 1500 part sampled over several
production lots.
2
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