AMS3402 查看數據表（PDF） - Advanced Monolithic Systems Inc

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AMS3402

N-Channel logic enhancement mode power field effect transistor

Advanced Monolithic Systems Inc 

AMS3402

DESCRIPTION

AMS3402 is the N-Channel logic enhancement mode power field effect transistor which is

produced using high cell density, DMOS trench technology. This high density process is

especially tailored to minimize on-state resistance. These devices are particularly

suited for low voltage application such as cellular phone and notebook computer power

management, other battery powered circuits, and low in-line power loss are required.

The product is in a very small outline surface mount package.

PIN CONFIGURATION

SOT-23-3L

3

D

G

S

1

2

1.Gate 2.Source 3.Drain

PART MARKING

SOT-23-3L

FEATURE

30V/2.8A, RDS(ON) = 48mΩ

@VGS = 10V

30V/2.3A, RDS(ON) = 53mΩ

@VGS = 4.5V

30V/1.5A, RDS(ON) = 80mΩ

@VGS = 2.5V

Super high density cell design for

extremely low RDS(ON)

Exceptional on-resistance and maximum

DC current capability

SOT-23-3L package design

3

A2YA

1

2

Y: Year Code A: Week Code

1

Advanced Monolithic Systems http://www.ams-semitech.com

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