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GTL2002D 查看數據表(PDF) - Philips Electronics

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GTL2002D
Philips
Philips Electronics Philips
GTL2002D Datasheet PDF : 24 Pages
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OVERVIEW
Description
Within the semiconductor world, there are many I/O standards that have different voltage level requirements for the
input voltage (VIH or VIL) and output voltage (VOH or VOL) typically based on the device operating voltage. These voltage
levels define how the device communicates with other devices and the voltage levels are expressed as a bus standard. A
few of these bus standards include 5 V CMOS, 5 V TTL, 3.3 V LVTTL, 2.5 V AGP graphics port and 1.5 V GTL+ host
bus. Providing a migration path is important in all industry segments because system components used in new designs
must communicate with components using the existing bus infrastructure even if they are operating at higher voltage
levels. Since new devices are designed and produced with advanced sub-micron semiconductor process technologies,
there has to be an easy way to prevent damage to the new device and translate voltage switching levels of the higher
voltage legacy device.
The Philips Semiconductors Gunning Transceiver Logic Translator Voltage Clamp (GTL-TVC) family of bi-directional
low voltage translators is designed in a BiCMOS process for protecting the sensitive I/Os on new advanced sub micron
components. The GTL-TVC devices protect these new devices from the over voltage and ESD conditions applied by the
older, legacy devices and translate the VIH and VOH switching levels. The information presented in this application note
describes the I/O-protection applications and voltage translations of the GTL-TVC family and will enable the design
engineer to successfully interface devices with different I/O voltage levels.
Applications
Voltage Level Shifting
The GTL-TVC devices can be used to interface between devices I/Os operating at different voltage levels. Since the
GTL-TVC device is open drain on both sides, pull up resistors may be needed depending on the I/O interface type (totem
pole or open drain) and the translation direction (High to Low, Low to High, or bi-directional). The GTL-TVC devices
allow translations between any voltages from 1.0 V to 5.0 V as long as the voltage difference between the Gate and
Source voltages is maintained at about 1 V. The recommended circuit in Figure 1 connects the gate (GREF) and
reference drain (DREF) together through a 200 k resistor to a voltage, which should be at least 1.5 V above the
reference Source (SREF) level. This circuit biases the gate to a threshold above the reference source voltage and
compensates for part-to-part threshold variations. Since the gate threshold voltage can vary between 0.6 V and 1 V, if the
GREF to SREF voltage is less than 1 V, the low voltage side high level may be degraded below the SREF voltage
because it can only pull up to a threshold below the GREF voltage.
1.8 V
1.5 V
1.2 V
1.0 V
VCOR
CPU
I/O
200 k
GTL200
GND GREF
SREF DREF
S1 D1
S2 D2
5V
VD
Chipset I/O
Figure 1. Typical Two-bit bi-directional application
1. Bi-directional Translation
For bi-directional translation, the drivers on both sides of the GTL-TVC device must be open drain outputs or at
least they must be controlled in such a way that contention between a High level on an output driver on one side
and a Low level on an output driver on the other side is prevented. The easiest solution is to use open drain
devices (the standard GTL and I2C/SMBus outputs are open drain outputs).
When using open drain devices, it is necessary to use pull up resistors, and they must be sized so as not to
overload the output drivers nor exceed the 15 mA recommended current for use of a GTL-TVC device in a
translation application. If the device is used for I2C bus translation, the resistors must be sized to provide less
than 3 mA of current (I2C devices are specified to drive 3 mA max at 0.4 V).
3

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