GTL2002 查看數據表（PDF） - Philips Electronics

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GTL2002

Bi-directional low voltage translators

Philips Electronics 

Figure 6 – GTL-TVC Typical Application Circuit

Propagation delay

Propagation delay for the GTL-TVC devices is problematic to define because, like the CBT functions, it is very small

across the transistor. The rise time is dominated by the RC time constant of the node, and the fall time is dominated by

the pull down driver, the total capacitance and the pull up resistor. The propagation delay is normally measured from ½

the swing on the lower voltage side to ½ the swing on the higher voltage side or vice versa. For a 0 V to 3 V transition on

the input with a 1 ns edge rate to a 0 V to 3 V output, the measurement points on both sides would be 1.5 V and the

propagation delay would be less than 1 ns. However, for a GTL+ to 5 V translation, where the pull up on the 5 V side is

2.2 k Ω and the total capacitance is 100 pF, the rising edge propagation would be measured from the 1 V point on the

GTL+ side to 2.5 V on the 5 V side and would measure about 95 ns because of the RC time constant.

GTL-TVC Electrical characteristics

The typical electrical characteristics of the GTL-TVC NMOS transistors as measured over temperature using the test

configuration shown in Figure 7 are included in Figures 8 to 13.

1.0 V

1.5 V

2.0 V

2.5 V

VSREF

VSn

VDDREF

GTL2002

GND GREF

SREF DREF

S1 D1

S2 D2

RDREF

VDDpass

RDn

VDn

Figure 7. GTL-TVC Test Set Up

0

0.00E+00

-2.00E-03

-4.00E-03

-6.00E-03

-8.00E-03

-1.00E-02

-1.20E-02

-1.40E-02

-1.60E-02

-1.80E-02

-2.00E-02

-2.20E-02

0.25 0.5 0.75

1 1.25 1.5 1.75 2 2.25 2.5

VDDref = 3.3v

VDDpass = 3.3v

RDn = 150 ohms

RDref = 200k

VSn (V)

Vsref = 1 V

25 deg C

85 deg C

-40 deg C

8

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