CHA5296-99F/00 查看數據表（PDF） - United Monolithic Semiconductors

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CHA5296-99F/00

27-30GHz High Power Amplifier

United Monolithic Semiconductors 

CHA5296

27-30GHz High Power Amplifier

Electrical Characteristics

Tamb = +25°C, Vd = 6V Id #900mA

Symbol

Parameter

Fop Operating frequency range (1)

Min Typ Max Unit

27

30

GHz

G

Small signal gain (1)

14

15

dB

∆G

Small signal gain flatness (1)

±1

dB

Is

Reverse isolation

50

dB

P1dB Pulsed output power at 1dB compression (1)

28

29

dBm

P03 Output power at 3dB gain compression (1)

IP3

3rd order intercept point (2)

29

30

41

dBm

dBm

PAE Power added efficiency at Psat

12

16

%

VSWRin Input VSWR (2)

5:1

VSWRout Output VSWR (2)

2.5:1

Tj

Junction temperature for 80°C backside

170

°C

Id

Bias current @ small signal

850 1000 mA

(1) These values are representative for pulsed on-wafer measurements that are made without

bonding wires at the RF ports.

(2) Value representative for CW on jig measurement.

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol

Parameter

Values

Unit

Vd

Drain bias voltage

6.25

V

Id

Drain bias current

1450

mA

Vg

Gate bias voltage

-2.5 to +0.4

V

Vgd

Negative gate drain voltage ( = Vg - Vd)

-8

V

Pin

Maximum peak input power overdrive (2)

+18

dBm

Ta

Operating temperature range

-40 to +80

°C

Tstg

Storage temperature range

-55 to +125

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) Duration < 1s.

Ref. : DSCHA52962147 - 27-May-02

2/6

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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