AN726 查看數據表（PDF） - Silicon Laboratories
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AN726 Datasheet PDF : 28 Pages
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AN726
6.3. Revision 1.0 High Power Configuration
Instead of directly driving the speaker, the high-drive I/O can interface with external MOSFETs as shown in
Figure 22, enabling higher-power applications. The board includes footprints for these external MOSFETs to
enable development with this configuration. The pull-up and pull-down resistors (~100 k) ensure that the tristate
reset state of the high drive I/O does not cause the FETs to accidentally conduct current. When using these
external MOSFETs, uninstall the R32, R35, R38, and R41 0 resistors.
Figure 23 illustrates an alternate full-bridge high-power output network. The diode and RC circuits on the MOSFET
gates ensure that the two devices will not both be conducting simultaneously.
PB4.0 (R+)
FB
VIOHD
L
Cg
C
PB4.1 (R-)
FB
L
Cg
Figure 22. Half-Bridge Class-D Output Network–External MOSFETs
The Revision 1.0 hardware provides footprints to a 9 V dc adapter connector and high power LDO. These
components can be populated to provide a higher current source to the external MOSFET transistors and VIOHD.
Alternatively, an external supply can connect to the transistors alone by removing the R48 0 resistor and placing
the positive terminal on the P_PWR test point.
20
Rev. 0.1
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