ILX523A 查看數據表（PDF） - Sony Semiconductor

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ILX523A

2700 pixel CCD Linear Sensor (B/W)

Sony Semiconductor 

ILX523A

Electrooptical Characteristics

(Ta = 25°C, VDD = 12V, data rate = 1MHz, mode without S/H (Pin 4 = GND),

light source = 3200K, IR cut filter CM-500S (t = 1.0mm) used)

Item

Symbol Min.

Sensitivity

R1

66.5

Sencitivity nonuniformity PRNU

—

Saturation output voltage VSAT

2.0

Dark voltage average

VDRK

—

Dark signal nonuniformity DSNU

—

Image Lag

IL

—

Dynamic range

DR

—

Saturation exposure

SE

—

Supply current

IVDD

—

Total transfer efficiency TTE

92.0

Output impedance

ZO

—

Offset level

VOS

—

Typ.

95

2.0

2.5

2.0

7.0

0.02

1250

0.02

15.0

98.0

300

7.4

Max.

123.5

10.0

—

8.0

14.0

—

—

—

25.0

—

—

—

Unit

V/(lx · s)

%

V

mV

mV

%

—

lx · s

mA

%

Ω

V

Remarks

Note 1

Note 2

—

Note 3

Note 3

Note 4

Note 5

Note 6

—

—

—

Note 7

Notes)

1. For the sensitivity test, light is applied with a uniform intensity of illumination.

2. PRNU is defined as indicated below. Ray incidence conditions are the same as for Note 1.

The output signal amplitude for test is 1V.

PRNU = (VMAX – VMIN)/2 × 100 [%]

VAVE

The maximum output of all the valid pixels is set to VMAX, the minimum output to VMIN and the average

output to VAVE.

3. Optical signal accumulated time stands at 10ms.

4. Output signal amplitude VOUT = 500mV.

5. Dynamic range is defined as follows.

DR =

VSAT

VDRK

When the optical signal accumulated time is shorter, the dynamic range gets wider because the optical

signal accumulated time is in proportion to the dark voltage.

6. Saturation exposure is defined as follows.

SE =

VSAT

R1

7. VOS is defined as indicated below.

VOUT D29

D30

D31

D32

D33

S1

GND

VOS

–3–

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